At a glance
| Booth | T9210 |
| Country | CN |
| Website | www.hkyq.com.cn |
Company profile
Zhejiang Hangke Instrument Co., Ltd., also identified as ATiS HangKe, traces its origin to the founding of Hangzhou Reliability Instrument Factory in 1984 and is headquartered in Hangzhou, China. The company describes itself as a high-end equipment manufacturer with a long history and accumulated technical expertise, focused on semiconductor reliability testing and special power-supply fields. It positions its business around testing solutions, efficient testing-system services and the development of electronic power equipment. After decades of innovation, Hangke states that it has burn-in screening equipment and testing systems covering a full series of electronic components. The company reports a mature sales system and after-sales team that can respond quickly to customer needs, with products and services supplied to customers across broad markets. Its research and development capability has received provincial- and ministerial-level science and technology progress awards. In 2020, the company changed its name to Zhejiang Hangke Instrument Co., Ltd. In 2026, it became a controlled subsidiary of Hangke Technology Co., Ltd., whose stock code is listed as 688006. Hangke states a development strategy of high quality, high efficiency and high speed, with emphasis on quality, technology and customers in the semiconductor industry. The company also describes energy conservation, reduced consumption and environmental coordination as part of its approach to sustainable development.
Exhibits
Hangke's wafer-level reliability test system is designed around JEDEC reliability-test standards for energized reliability testing of 6-inch and 8-inch wafer-level devices at controllable high temperature. The CWBS1000 wafer-level reliability test system provides high-precision high-voltage output, long-term recording of high-precision current and controllable temperature parameters, and export of recorded test data as experimental tables and MAP diagrams in multiple formats. A customized probe station can support burn-in testing of up to three wafers simultaneously, with independent protection for each wafer die against over-current and over-voltage conditions. The system supports nitrogen protection to prevent wafer oxidation, over-pressure protection during gas filling, replaceable probe cards for different package devices and contact-in-position detection during wafer installation. Real-time temperature and pressure detection is provided, together with HTGB and HTRB burn-in functions and automatic testing and data analysis for parameters including Vth, Idss and Igss. CWBS1000 includes wafer-layout MAP configuration, real-time data display, historical-data query, SECS-II protocol support, connection to a centralized control station and customized MES-system integration. Its stated operating range includes room temperature to 200°C, support for SiC and other 6-inch and 8-inch wafers, temperature overshoot below 2°C and gate-voltage output of ±60V with stated accuracy of 0.1%+10mV. Gate-current specifications include HTGB from 0.1nA to 0.1mA at 1%±5LSB for a single station and Vth at 20mA with accuracy of 0.1%±20uA for a single station. Drain-side specifications list 2000V output with accuracy of 0.5%*Vmax±1000mV and drain current from 1nA to 1mA at 1%±2LSB for a single station. The system lists HTRB overshoot below 2% and HTGB overshoot below 200mV, communication by TCP/UDP network or 485 serial interface, Windows10 or later, and SECS-II interfacing to third-party systems and data. CWBS1000 is listed at 760kg±10% with overall dimensions of 2050mm(W) x 1400mm(D) x 1750mm(H), a single-chamber size of 1920mm(W) x 1250mm(D) x 303mm(H), and applicable standards AEC Q101, JEP 183, IEC 60749-23 and JESD 22-A108F. The product is intended for high-temperature, high-voltage reliability testing of SiC and other wafers and supports automatic measurement and analysis of Vth, Igss and Idss parameters. Hangke also lists a large-scale integrated-circuit burn-in test system capable of performing HTOL testing on chips at RT~+150°C while monitoring component output signals in real time and automatically comparing vectors during burn-in. A second large-scale integrated-circuit burn-in configuration supports dual temperature zones for HTOL testing at RT~+150°C with real-time output-signal detection and automatic vector comparison. The broader reliability-testing lineup also includes an IGBT power cycle test system. The MCT-3600V-S burn-in socket uses a PPS+gf30 black body, BeCu contacts and Au plating on a Ni-base coating. MCT-3600V-S is rated at 1A, lists insulation resistance of 1000mΩ minimum at 500V DC and contact resistance of 100mΩ maximum at 100mA maximum, and has an operating-temperature range of -55℃ to +175℃. The MCT-3600V-S page lists fatigue endurance of 50000 cycles, with a note that results may vary according to test conditions. The TQFP-64-0.5-01 burn-in socket uses a PEI+gf30 black body, BeCu contacts and Au plating on a Ni-base coating. TQFP-64-0.5-01 is also rated at 1A, lists insulation resistance of 1000mΩ minimum at 500V DC and contact resistance of 100mΩ maximum at 100mA maximum, and operates from -55℃ to +175℃. Its fatigue specification is 50000 cycles, again with the stated qualification that results can differ under different test conditions.
Capabilities and products
- 6/8-inch wafer HTGB/HTRB reliability test systems, up to 200°C and 3 wafers in parallel
- automatic wafer Vth/Idss/Igss measurement and data analysis
- SECS-II and MES integration for reliability test equipment
- IC HTOL burn-in test systems with dual temperature zones, room temperature to +150°C, real-time signal monitoring, and automatic vector comparison
- IGBT power cycling test systems
- semiconductor burn-in sockets for -55°C to +175°C
- special-purpose power supply equipment R&D