UniTest Taiwan Co., Ltd.

Exhibitor at SEMICON Taiwan 2026 · Booth J3046

Booth J3046Country TW3 product topics
Show facts

At a glance

BoothJ3046
CountryTW
Websitewww.uni-test.com/en/semiconductor/semiconductor_list.php
Exhibitor profile

Company profile

UniTest Taiwan Co., Ltd. is UniTest's Taiwan Branch and a Taiwan-registered operation in Hsinchu Zhubei formed through UniTest investment and cooperation, providing Asian memory manufacturers with marketing, installation, and technical services for memory test equipment. The Taiwan operation's recorded business scope includes machinery manufacturing, precision-instrument wholesale and retail, general instruments, machinery wholesale, electronic materials, import and export, and electronic-component manufacturing, and its service scope includes DDR2 and DDR3 IC and module test equipment. UniTest describes semiconductors as a foundation for future technologies including robotics, autonomous vehicles, and AI, and says the market's demand for new semiconductor development and supply continues to drive the industry's growth. The company says it began the business more than two decades ago with a commitment to localizing semiconductor equipment and has continued research, development, and challenges around domestic production despite periods of difficulty. That work produced a full tester lineup spanning DRAM and NAND FLASH wafers, components, modules, and SSDs, while development for system semiconductors led to burn-in testers and PMIC testers and an intended expansion toward CIS, RF, and AP testers. Alongside its semiconductor business, UniTest developed an energy business and states that in 2019 its perovskite solar-cell module work was recognized for the highest efficiency in the field after ten years of green-energy activity. UniTest also states that it follows the 10 principles of the UN Global Compact, pursues sustainable-development goals, works to create a safe and healthy workplace, publicly expresses its ESG-management commitment, and uses human-rights and ethical management to build an environment that respects employees, customers, partners, and other stakeholders. UniTest operates a Head Office and an Icheon Office and also lists a Pyeongtaek new factory; the Pyeongtaek manufacturing facility was completed and became operational in December 2021. UniTest's corporate-identity standard specifies #0072bb for the test-box element, #939496 for “Uni,” #e4e5e7 for “Test,” and Arial Black as the font, with subordinate colors available for special media or environments. The corporate history begins with the March 2000 founding of ISOA-TECH, followed in 2002 by development of the A4000 DDR Memory Tester, certification as a venture business, the change of trade name to UniTest Co., Ltd., and establishment of an affiliated research center, then a 2004 joint-development agreement with Hynix for memory-component and module testers. In 2005 UniTest developed DDR and DDR2 memory testers, acquired ISO 9001/14001, received the KT Mark for UNI460, and founded the Taiwan corporation; in 2006 it added products including UNI480 and UNI840, obtained CE-related certifications, received INNOBIZ certification, and listed on KOSDAQ. From 2007 through 2009 the history records mass-production and high-end memory tester developments including UNI580, UNI5100, UNI5200, and UNI4200, recognition as a next-generation world-class goods producer, a nano-semiconductor source-technology commercialization project, the UNI930 high-speed burn-in device, and entry into photovoltaic power generation and LED lighting. Between 2010 and 2014 UniTest recorded successful commercialization of nano-semiconductor equipment source technology, world-class-product recognition, participation and supplier designations in photovoltaic power, a 30 Million Dollar Export Tower in 2011, establishment of a US corporation, acquisition of TESTIAN to enter the non-memory market, and development of UNI91K, UNI5400, and UNI51K testers. From 2015 through 2019 the company developed mass-production DDR4 and DDR5 high-speed testers, opened a China office, developed a NAND FLASH hybrid burn-in tester and the PCIe Gen4 UNI92K tester, received the 50 Million Dollar and 70 Million Dollar Export Tower awards, reached shipment of its 1000th semiconductor tester, and recorded NREL certification for perovskite solar-cell efficiency. The more recent history records a 2020 MOU with Korea Electric Power Corporation for commercialization of glass-window-type solar cells, a 2021 agreement with KEPCO for joint development of a prototype window-integrated solar cell, completion of the Pyeongtaek factory in 2021, and a March 2025 change to a co-representative system.

Exhibitor profile

Exhibits

UniTest's semiconductor test offering covers wafer testing, packaged-device and module testing, high- and low-temperature memory burn-in, PCIe NVMe SSD testing, logic and power-IC burn-in, and the broader memory-testing functions needed to evaluate speed, data Read/Write or Read/Write/Erase behavior, Refresh, repair functions, and early defects. For DRAM and PCRAM wafers before the back-end process, UNI650 checks electrical performance including speed, data Read/Write/Erase, and repair functions with parallelism of 3,072, a 222MHz test rate, current of 1A(3V), a 1,500 x 1,000 x 1,900 mm main frame, a 940 x 1,490 x 984 mm test head, and Linux operation. UNI610 performs the corresponding wafer-level electrical checks for NAND Flash before post-processing and is specified with parallelism of 1,024, a 50MHz test rate, 400mA(5V), a 1,000 x 800 x 1,688 mm main frame, a 600 x 750 x 800 mm test head, and Linux. For DRAM memory burn-in, UNI940A is specified with parallelism of 6,144, a -10℃ ~ 125℃ temperature range, a 400Mbps test frequency, dimensions of 3,600 x 2,000 x 2,225 mm, and Linux. UNI940FL operates NAND Flash devices at high and low temperature after memory-semiconductor processing to detect early-stage defects and failures, with parallelism of 9,216, a 25℃ ~ 110℃ range, a 50Mbps test frequency, dimensions of 3,400 x 1,800 x 2,300 mm, and Linux. UNI5900 examines packaged LPDDR4, GDDR5, and DDR5 devices after memory-semiconductor processing, checking electrical performance such as speed, data Read/Write, and Refresh; its listed specifications include parallelism of 512, 9Gbps speed, a -40℃ ~ 125℃ range, an 800 x 1,020 x 2,155 mm main frame, a 1,400 x 1,000 x 962 mm test head, and Linux. UNI480E tests the electrical performance of multi-chip DRAM modules covering DDR2, DDR3, and DDR4, including module speed, data Read/Write, and Refresh, and lists parallelism of 12, 800Mbps speed, a temperature range dependent on the handler, a 1,300 x 800 x 1,566 mm main frame, a 714 x 470 x 742 mm test head, and Windows XP. For PCIe Gen4 SSDs, UNI92K detects early defects by examining storage-device performance and supports M.2, U.2/U.3, FHHL, and BGA form factors with PCIe NVMe; it lists parallelism of 512, a 16Gbps data rate, a -40℃ ~ 125℃ range, dimensions of 3,300 x 1,800 x 2,300 mm, and Linux. UNI92KR-6B also targets early-error detection for PCIe Gen4 SSDs using M.2, U.2/U.3, and FHHL form factors with PCIe NVMe, with parallelism of 192, a 16Gbps data rate, 70℃±5℃ with loading, dimensions of 720 x 1,250 x 2600 mm, and Linux. FECBIS-CP is a Power IC burn-in solution specialized for high voltage and high peak current, organized as 3 Slot per Zone with Max 2 pattern zones, 6 pattern slots, 1 temperature zone, up to 64 driver-receivers, programmable clocks with leading and trailing edges per pin and 8 on-the-fly timing sets, and a micro-programmable sequence controller in vector memory. The F-1 burn-in tester is described as an upgraded high-end version of FECBIS-1, with Max 32 user-set pattern zones, 16 slots per temperature zone, 2 temperature zones from Ambient to 150’C, Parallel and Serial slot synchronization, up to 256 driver-receivers with a 512 option, MAX 10 MHz system rep rate, and the same programmable-clock and vector-memory sequence-control features. FECBIS-1 is specialized for low-noise test channels, multi VIH level, high frequency for SERDES Chip and TCON, and high peak current, and lists Max 24 user-set pattern zones, 8 slots per temperature zone, 3 temperature zones from -40’C to 150’C, Parallel and Serial synchronization, up to 256 driver-receivers with a 512 option, MAX 10 MHz system rep rate, programmable clocks, and a micro-programmable sequence controller. UniTest defines photovoltaic generation as technology that transforms sunlight directly into electrical energy through solar cells and describes a photovoltaic system as comprising a solar-cell module, storage batteries, and a power transformer. The solar-cell explanation describes photo-electromotive force arising from photoelectric effects at a metal-semiconductor contact surface or a semiconductor PN junction and identifies silicon photoelectric cells as a PN-junction type used for solar cells. It further describes a solar cell as joining N-type and P-type semiconductors, with absorbed solar energy generating charged particles so that electrons gather toward the N-type side and holes toward the P-type side, creating electric potential and allowing current to flow through a connected load. The photovoltaic page lists advantages including nonpolluting and effectively limitless clean energy, generation where power is needed, easy maintenance with unmanned operation, and a life span of at least 20 years. The same page also lists dependence on regional solar radiation, the need for a large area because of low energy density, limited installation locations, and high installation costs as disadvantages or constraints of photovoltaic power. UniTest links its green-energy activity with semiconductor technology by explaining that the solar cell is a semiconductor represented by silicon and was developed on the basis of advances in semiconductor technology and semiconductor characteristics. The perovskite program describes a third-generation organic/inorganic hybrid photovoltaic module positioned as a lower-price, high-efficiency alternative to silicon modules; it records 14.8% sub-module efficiency, an August 2016 perovskite technology-transfer contract with the Research Institute of Chemical Technology, and development work through a Perovskite Module Development Research Center. Perovskite modules are described as lighter and less expensive than silicon modules, capable of flexible-module production for electric goods, curved-surface buildings, and vehicles, adjustable in transparency for visibility-sensitive areas, applicable to tandem photovoltaic modules, and able to generate electricity under low-light conditions for indoor use, with examples including indoor IOT and glass-window types. The Solar Gate PV050K-G3LX-JW inverter is rated at 50kW, with 51.5kW PV maximum power, 580Vdc start voltage, 1000Vdc maximum voltage, a 580~1000Vdc input range, a 580~800Vdc MPPT range, 650Vdc rated voltage, 88.8A maximum input current, 3P4W 380Vac nominal output, 59.3~60.5Hz frequency range, and 75.8A maximum output current. Its listed system specifications include Euro efficiency above 97%, maximum efficiency above 98.0%, default power factor above 0.99, transformer-less topology, 610 X 890 X 315 mm dimensions, 90Kg weight, forced-air cooling, an IP55 enclosure, Graphic LCD, RS485 communication, and an operating-temperature range of -20°C~50°C. The inverter feature list states that SIC semiconductor elements are used for higher-efficiency power transformation than existing IGBT elements, and it describes wall-hanging outdoor installation, an all-in-one inverter plus joint box, sunrise/sunset hunting-prevention and AC SMPS control linked to patent no. 10-1926326, suitability for dispersed industrial, building, and residential power systems, automatic stopping when inverter errors are detected, and MPPT control that maintains solar cells at maximum power status.

Exhibitor profile

Capabilities and products

Topic group

Related product topics

On this site