At a glance
| Booth | I3307 |
| Country | TW |
| Product categories | Circuit Design; Electronic Design Services (EDS); System Level Design (SLD) · Manufacturing Process Support and Development · Device; Wafer; Display Panel Handling Products |
| Website | www.ultrabandtech.com |
Company profile
Ultraband Technologies is a III-V compound semiconductor fabless IC design house based in Taiwan. We are focused on designing 5G wireless Monolithic Microwave Integrated Circuits (MMIC), RF Frontend Modules, Low Earth Orbit (LEO) ICs, and III-V Power Devices. We also are dedicated to optimizing Epitaxial Structures and Device Layouts. For 5G MMIC, we focus on high-frequency mmWave GaN ICs, including the 28GHz and 39GHz bandwidth – Switches, LNA (Low Noise Amplifiers), and PA (Power Amplifiers). We are committed to developing high-frequency Antenna RF front-end modules for 5G mmWave small cell, including AiP, Beam-forming IC array, Up/Down converters, and control IC modules. Regarding advanced compound semiconductor Power Devices, we place emphasis on developing high breakdown voltage D-mode GaN power and E-mode GaN power devices. All of these are used in AC/DC, DC/DC Inverters & Converters for use in Charging Stations, Onboard Chargers, high wattage Quick Chargers, and Computing Server Power Supplies.
Capabilities and products
- 28GHz and 39GHz mmWave GaN IC Switches, LNA, and PA
- 5G mmWave small-cell Antenna RF front-end modules with AiP and Beam-forming IC array
- 5G wireless Monolithic Microwave Integrated Circuits (MMIC)
- Device Layouts optimization
- Epitaxial Structures optimization
- III-V Power Devices
- III-V compound semiconductor fabless IC design
- Low Earth Orbit (LEO) ICs
- RF Frontend Modules
- high breakdown voltage D-mode GaN power and E-mode GaN power devices