At a glance
| Booth | I3307 |
| Country | TW |
| Website | www.ultrabandtech.com |
Company profile
Ultraband Technologies, Inc. is a III-V compound semiconductor fabless IC design house based in Taiwan, founded in March 2020 with paid-in capital of NT$500 million. The company focuses on designing 5G wireless Monolithic Microwave Integrated Circuits (MMIC), RF Frontend Modules, Low Earth Orbit (LEO) ICs, and III-V Power Devices, while optimizing Epitaxial Structures and Device Layouts. Its high-performance power-amplifier semiconductor design uses III-V compound technologies including GaN HEMTs and GaAs pHEMTs to pursue higher efficiency, greater linearity, and reliability for wireless communication systems. Its RF MMIC portfolio spans microwave to millimeter-wave PA, LNA, switches, and antenna front-end modules using GaN-on-SiC, GaAs pHEMT, and InP HEMT processes, supporting 5G mmWave bands n257, n258, and n261 and applications in small base stations, radar, satellite communications, and IoT. Ultraband Technologies, Inc. develops high-breakdown-voltage D-mode and E-mode GaN power devices for AC/DC and DC/DC converters used in charging stations, on-board chargers, fast-charging devices, and server power systems, and also targets power systems, renewable energy, electric vehicles, and aerospace defense. Its GaN-on-SiC power-device work emphasizes high efficiency, low loss, long-term stability, and consistent reliability in harsh environments under strict quality control. Its SYSTEM & MODULE team develops next-generation SATCOM and phased-array modules, including the Azhdarchidae Ku-band phased-array terminal for LEO with electronic beam steering, the modular Quetzalcoatlus system scalable from home receivers to ground stations, and the AzhdaeQ UAV module for BVLOS flights, addressing satellite internet, airborne and maritime communications, and future mesh networks. The company describes end-to-end capabilities in epitaxial-structure design, device-layout optimization, strict quality control, and rapid mass production.
Exhibits
For 5G MMIC, Ultraband Technologies, Inc. focuses on high-frequency mmWave GaN ICs at 28GHz and 39GHz, including Switches, LNA (Low Noise Amplifiers), and PA (Power Amplifiers). It develops high-frequency Antenna RF front-end modules for 5G mmWave small cells, including AiP, Beam-forming IC arrays, Up/Down converters, and control IC modules. Its RF products span microwave to millimeter-wave frequencies using GaN HEMT-on-SiC, GaAs pHEMT, and InP HEMT technologies for high linearity, low noise, and wide bandwidth in 5G mmWave, satellite communications, radar, and IoT applications; millimeter wave is described as covering 30 to 300 GHz with high bandwidth, low latency, and high-capacity transmission characteristics. Through GaN, GaAs, and InP compound-semiconductor processes, the company develops high-efficiency, high-linearity millimeter-wave power amplifiers (PA), low-noise amplifiers (LNA), and antenna front-end modules (FEM). Its mmWave portfolio also includes Ku- and Ka-band switches, LNAs, and PAs optimized with III-V semiconductor technologies for Satellite Ground Terminal and other Ku- and Ka-band applications. UltrabandTech describes comprehensive R&D capabilities spanning semiconductor-device development, IC design, packaging, power management, and antenna-module system integration, including MMIC (PA, LNA, Switch and FEM), 3D MMIC packages, passive IPD and active III-V compound parts in cavity-sandwich packaging, and antenna-module designs for 5G FR2 and satellite communications. For GaN-on-SiC power devices, the listed on-resistance range is 30 mΩ to 150 mΩ, while antenna modules can be expanded to different antenna sizes to meet different application needs.
Capabilities and products
- 28GHz/39GHz 5G mmWave GaN MMICs
- 5G mmWave AiP/beam-forming/up-down-converter front-end modules
- Ku/Ka-band satellite-communications MMICs
- 650V–1200V GaN-on-SiC power devices
- 3D MMIC packaging
- IPD/III-V cavity-sandwich packaging
- SATCOM phased-array modules
- epitaxial-structure design and device-layout optimization