At a glance
| Booth | P6106 |
| Website | www.anjimicro.com/en/jiejuefangan.html |
Company profile
Taiwan Anji Microelectronics Technology Co., Ltd. is a wholly owned Taiwan subsidiary. Anji was founded in 2004 and positions itself as an emerging semiconductor-materials enterprise based on technological innovation and intellectual property, developing, producing, and selling high-growth, high-function materials under a market strategy of being based in China and serving the world. Its principal material businesses include chemical mechanical polishing slurries, functional wet electronic chemicals, and electroplating solutions and additives. The Taiwan entity is also associated with business activities including chemical products, precision instruments, non-destructive testing, product design, research and development services, and electronic materials, while the related Anji operation integrates research and development, production, sales, and technical services.
Exhibits
Anji's CMP slurry portfolio covers copper and copper-barrier slurries, dielectric slurries, tungsten slurries, ceria-based slurries, silicon-substrate slurries, slurries for various substrates, and polishing slurries for new materials and new technologies; copper and barrier products serve chip manufacturers in China and have reached overseas markets, while other slurry series are supplied to multiple chip manufacturers in China and abroad with production scaled to customer demand. Cu and Cu Barrier Polishing Slurries remove and planarize copper interconnects in IC manufacturing, are mass-produced for logic and memory production lines, and continue development and demonstration for next-generation technology nodes. Tungsten Polishing Slurries remove and planarize tungsten in IC manufacturing; multiple products have passed qualification in advanced processes and reached mass production for memory and logic applications, with technical-platform planning and capability development aligned to advanced customer processes. Dielectric polishing slurries remove and planarize materials such as silicon dioxide and silicon nitride and are mass-produced for logic and memory processes; ceria-based slurries support shallow-trench isolation and other high-silicon-dioxide-removal processes with high removal rate, high selectivity, and high planarization efficiency, and can be developed into new products for customer needs. Silicon-substrate polishing products include stock-polishing and fine-polishing slurries, with customized silicon slurries developed after understanding customer requirements and released at client sites. Polishing slurries for new materials and new technologies include TSV through-silicon-via and hybrid-bonding slurries for advanced packaging, along with slurries for polymers and carbon, and multiple products have entered mass production and market supply. Functional wet electronic chemicals include post-etch residue remover (PERR), photoresist stripper, post CMP cleaning solution, and etchants, with PERR, photoresist stripper, and post CMP cleaning solution widely used in volume production of 8-inch and 12-inch IC wafers. Al PERR removes post-etch residue from metal lines, vias, and pads in IC AlCu interconnect processes and is mass-produced for 8-inch and 12-inch logic and memory chips; Cu PERR supports BEOL Cu post-etch cleaning in 90-40nm logic, 3D NAND, DRAM, CIS, and TSV Cu-reveal processes with residue-removal capability, low defectivity, and cost benefits. TiN Hard Mask Cu PERR supports 28nm and beyond IC BEOL damascene processes with TiN/Cu selectivity and post-etch residue removal and is mass-produced, while selective etchants provide wet-etch solutions for SiGe, Si, SiN, polysilicon, and other materials for special process requirements. Cu Post CMP Cleaners are available in acid-based and alkaline-based systems for residue removal and copper or substrate protection across 90-40nm mature nodes and 28nm and beyond advanced nodes. Photoresist Stripper removes thick-film photoresist above 100 µm in wafer-level packaging and MEMS and is mass-produced for 8-inch and 12-inch wafer-level packaging including gold bumps, solder bumps, and pillar bumps, as well as MEMS and TSV; cured PI removers provide cleaning for HD4100, HD8820, and BL301 polyimide after curing, and deflux removers clean flux after SnAg bump reflow in advanced packaging. Anji's electroplating portfolio includes Copper, Nickel, Nickel-Iron, and Tin-Silver VMS or plating solutions and additives for IC front-end manufacturing and advanced-packaging processes such as TSV, bumping, and redistribution lines, with applications in 6-inch, 8-inch, and 12-inch processes. Copper ECP VMS and additives provide high-purity copper electroplating for Cu dual-damascene front-end, TSV, bumping, and RDL processes, with mass production in advanced packaging and qualification in Cu dual damascene and TSV. Nickel plating solution is mass-produced for advanced-packaging bumping as a barrier between Cu and SnAg and provides high-purity, ductile, low-stress performance; Nickel-Iron plating solution is mass-produced for advanced packaging and MEMS Hall-element technology; Tin-Silver plating solution supports advanced-packaging bumping with normal-speed and high-speed plating.
Capabilities and products
- Cu/Cu-barrier CMP slurries
- tungsten CMP slurries
- dielectric CMP slurries
- ceria-based STI CMP slurries
- silicon-substrate polishing slurries
- TSV CMP slurries
- hybrid-bonding CMP slurries
- post-etch residue removers (PERR)
- photoresist strippers
- Cu Post-CMP cleaners
- selective etchants for SiGe/Si/SiN
- copper electroplating solutions and additives
- nickel plating solutions
- nickel-iron plating solutions
- tin-silver plating solutions