At a glance
| Booth | R8018 |
| Country | JP |
| Website | www.ntt-at.com |
Company profile
NTT Advanced Technology Corporation was established on December 17th, 1976 and has its head office in Tokyo. Its stated capital is 5 billion yen, NTT, Inc. holds 100％ of the shares, sales were 74.3 billion yen for the period on March 2026, and the company had 2,165 employees as of March 31, 2026. NTT Advanced Technology Corporation describes its mission as “Human Power and Technology,” combining the human and technological capabilities of its people to create products and businesses with customers. Its corporate direction is shaped by rapid ICT evolution centered on digital technologies such as AI and by challenges including global warming, labor shortages, and deterioration of social infrastructure. The company states that it enhances its technologies with a forward-looking perspective to create new value and respond to customer needs and wider social issues. Its Application Business develops and sells applications and services for data-distribution businesses in areas including DX and energy, using digital technologies such as AI and RPA. Its Materials & Nanotechnology Business develops and sells products and services in nanoelectronics, optics, and environmental fields using core technologies such as advanced materials and nanofabrication. Its Social Platform Business covers design, construction, operation, maintenance, and monitoring based on network and security technologies represented by IOWN. Its Total Solution Business develops and sells solutions intended to improve CX by combining its own products and services with commercial products. Group companies listed by NTT Advanced Technology Corporation include NTT-AT SYSTEMS CORPORATION, NTT-AT TECHNO COMMUNICATIONS CORPORATION, NTT-AT IPS CORPORATION, NTT-AT CREATIVE CORPORATION, and NTT-AT MTACK CORPORATION. Within its leading-edge technology activities, NTTアドバンステクノロジ株式会社 handles products and services centered on optical fields, nanoelectronics, and environmental fields. It builds on advanced technologies accumulated at NTT laboratories to conduct product development and sales, technology transfer and consulting, and research-and-development support. The company also emphasizes broad core technologies and R&D experience as the basis for identifying and providing technologies that customers require.
Exhibits
NTT Advanced Technology Corporation provides custom nanoimprint molds for research, development, application, and commercialization, using semiconductor microfabrication technology that it has applied to nanoimprint molds for more than 20 years. The company reports experience supplying over 1000 nanoimprint molds and takes orders from universities, research institutes, companies, and customers in semiconductors, optics, IT, bio, medical, and other fields. Nanoimprint mold materials can be specified to customer needs, including quartz or silicon. Its microfabrication range starts from a minimum 20nm pattern and extends to the μm order, with high-aspect-ratio structures also available. Pattern options range from repeated arrays of a single pattern to complex circuit patterns, with multi-level stepped patterns for applications such as holograms. Three-dimensional mold shapes include microlens arrays (MLA) and inverted pyramid patterns, and the custom-mold process is supported by detailed consultation on customer specifications. For nitride semiconductor epitaxial wafers, the company can grow crystals on silicon (Si), sapphire (Al2O3), silicon carbide (SiC), and gallium nitride (GaN) substrates and can handle the substrate types used for nitride systems. Development studies using multiple substrate types can be carried out in parallel, and orders are accepted from small-scale prototypes through mass production. The epitaxial-wafer capability is compatible with large-diameter 8-inch silicon substrates, while device fabrication and material analysis can be carried out through collaboration with related departments. Application examples for nitride semiconductor epitaxial wafers include USB small quick chargers, LED street lights, power devices for mobile base stations, automotive power devices, power devices for home appliances, and environmentally resistant devices. An example HEMT structure for power applications is shown on 6 inch Si, and the available lineup includes AlGaN/GaN HEMT structures on 6 inch and 8 inch Si substrates with GaN cap, in-situ SiN (~5nm), in-situ SiN (~40nm), and p-GaN (~80nm) options. Listed epitaxial-wafer part numbers include SEE61K22227S20G, SEE61K22227S30G, SEE61K22515S30G, SEE61K22520S30G, SEE61K22525S30G, SEE61K23020S30G, SEE61K21745N30G, SEE61K22520N30G, SEE61K22520N35G, SEE61K22520N40G, SEE61K22526N15G, SEE61K22526N20G, SEE61K22526N35G, SEE61K22527N35G, SEE61K23020N30G, and SEE61K02822S30G. For the listed Si-substrate structure, the GaN cap is 2 (nm) or no cap, the AlGaN barrier has 20~30 (%) Al content and 15~27 (nm) thickness, the GaN channel is 150~400 (nm), and the C-doped buffer is ~3900 (nm). Stated characteristics include sheet resistance of 350~400 ohm/sq. with AlN spacer or 450~500 ohm/sq. without AlN spacer, electron mobility of ~1700 to 1900 cm2 /Vs, FWHM (002) <800 arcsec, FWHM (102) <1400 arcsec, breakdown voltage 800V to 1000V depending on device structure, and bowing value < 50um. A separate AlGaN/GaN HEMT example allows a GaN cap that is doped or undoped at 0-5nm, an AlGaN barrier with or without AlN spacer at 10-50% Al-content and <~50nm thickness, and a 1-3 μm (Al)GaN buffer. For that HEMT example, substrate options are Si at 4 to 8 inches, Sapphire at 2 to 4 inches, SiC at 2～6 inch, and GaN at 2 to 4 inches. Related support includes morphological observation for device and material morphology, structure, and crystal-structure analysis; chemical analysis from trace analysis to principal-component analysis; and semiconductor process service for outsourced device prototyping. Adhesive technology for optical communication is one of the company’s main technologies, with adhesives and resins developed for requirements such as refractive-index matching, precision fixing, heat resistance and high elasticity, and low moisture permeability. NTT Advanced Technology Corporation also offers UV-curable high refractive index resins with high transparency in the visible-light range. The NH700 series is an optical material with high refractive index, high transparency, and environmental resistance, and its solvent-containing type is intended for forming thin films. NH700 series specifications list refractive index 1.8 or 1.9, film thickness 200nm to 1μm with a typical value of 300nm, transmittance >90% including reflection loss, haze <0.1%, and UV curing. Customization can cover a refractive-index range from 1.6 to 1.9 or higher, application by spin coat, inkjet, bar coat, or dispense, and film thickness from 200 nm or more for thin films to 100 μm or less for thick films. Product features include high refractive index, high transparency, low haze, lightfastness, heat resistance, nanoimprintability, and adhesion. Application examples include optical waveguides for XR devices, resin lenses, silicon-photonics communication devices, resins for nanoimprint, optical glue, and optical coating agents. Nanoimprint processing transfers a nanoscale uneven pattern from a mold into resin by pressing the mold against a resin-coated substrate and applying heat or photo-curing, and is described as a simpler, lower-cost route than conventional nanoscale processing. A nanoimprint-lithography pillar-pattern example lists width of 0.5-5μm and depth of 350 nm.
Capabilities and products
- custom quartz and silicon nanoimprint molds
- 20nm fine-pattern mold fabrication
- multilevel holographic-pattern mold fabrication
- microlens array and inverted-pyramid mold fabrication
- custom nitride semiconductor epitaxial wafer manufacturing
- AlGaN/GaN HEMT epitaxial wafers
- InAlN/GaN HEMT epitaxial wafers
- semiconductor device prototyping services
- semiconductor device and material morphology and crystal structure analysis
- chemical analysis of organic and inorganic materials
- custom UV-curable high-refractive-index optical resins
- refractive-index-matching optical adhesive development
- precision-fixing optical adhesive development
- heat-resistant high-elasticity optical adhesive development
- low-moisture-permeability optical adhesive development
- AI/RPA data distribution application development
- network and cybersecurity platform design, construction, operation and maintenance
- optical and nanotechnology transfer, consulting and R&D support