Latent Technologies Inc.

At a glance

Company profile

Latent Technologies Inc. was founded in 2004 and is headquartered in Taoyuan, Taiwan, with over two decades of experience in the wide bandgap (WBG) compound semiconductor industry. The company specializes in silicon carbide (SiC) technologies and provides one-stop solutions spanning materials, equipment, and process integration. With additional operations in Hsinchu and Shanghai, Latent Technologies Inc. serves a global customer base in semiconductors and high-power electronics. Its expertise in high-temperature materials and crystal growth processes extends its business scope across the semiconductor value chain from upstream materials to equipment solutions. Its portfolio includes crystal growth furnaces, graphite materials, crucibles, wafer inspection systems, automation equipment, and critical components such as sensors and valves. The company also provides graphite purification and gas recycling systems as part of its advanced process-integration capabilities. In 2018, Latent Technologies Inc. introduced Taiwan's first PVA graphite purification systems, strengthening its material-processing capabilities. In 2020, the company established its wholly owned subsidiary, LEAP Semiconductor Corp., to expand into SiC materials, with LEAP focusing on SiC wafers, epitaxial wafers, and related process services. Together, Latent Technologies Inc. and LEAP Semiconductor Corp. cover materials, crystal growth, wafer processing, and epitaxy within the SiC supply chain through a vertically integrated model. Latent Technologies Inc. positions itself as a key solution provider in the SiC ecosystem through equipment integration and process technology, while LEAP Semiconductor Corp. strengthens the materials and wafer side of the group. As demand expands from electric vehicles, high-power electronics, and renewable-energy applications, Latent Technologies Inc. will continue advancing SiC innovation and collaborating with industry partners on next-generation semiconductor technologies.

Exhibits

High-Purity Semi-Insulating Substrates feature extremely low conductivity and excellent high-frequency performance for microwave and RF device fabrication, serve 5G communication base stations, radar systems, and satellite communications, and reduce signal loss while improving system stability in high-frequency, high-speed environments. Conductive Substrates provide good electrical conductivity and high voltage tolerance for power electronic devices used in electric vehicles, photovoltaic power systems, smart grids, and rail transportation, enhancing energy-conversion efficiency and reducing power loss. Silicon Carbide Homoepitaxy Technology forms an epitaxial layer with controlled thickness and doping concentration on high-quality SiC substrates, reducing the impact of substrate defects and improving device breakdown voltage and switching performance for high-voltage and high-frequency power devices. The epitaxial-wafer portfolio covers 3-inch, 4-inch, 6-inch, and advanced 8-inch sizes, supports diverse process platforms and manufacturing requirements, and includes 8-inch wafers that have reached mass production for scalability and cost optimization. Wet Processing Equipment covers wafer cleaning and etching, including Fully Automatic / Semi-Automatic Batch Cleaning Systems with automation control, precise temperature control, and chemical circulation filtration for process stability and contamination control. Single-Wafer Wet Processing Equipment includes automatic wafer stripping systems, scrubbing systems, and final cleaning equipment for SiC epitaxial wafers, enabling efficient, non-destructive cleaning of fine wafer structures for advanced processes. SiC Wafer Inspection Systems detect contamination, micro-scratches, and cracks in silicon carbide materials, while Patterned Wafer Inspection (AOI) identifies scratches, pits, and particle contamination on patterned wafers and provides automated defect classification and localization. The TWS206 morphology-inspection system measures BOW, WARP, TTV, LTV, and Thickness, supports automatic wafer sorting or semi-automatic manual loading and scanning, uploads data to factory MES systems, uses upper and lower coaxial chromatic confocal sensors, supports most transparent and opaque wafers including rough surfaces, covers cutting, grinding, polishing, and thinning process steps, and supports 4, 6, 8, and 12-inch wafers. The LFMSiC series inspects SiC-substrate defects with a precision optical imaging system and proprietary algorithms, can be configured from semi-automatic desktop operation to full automation with robot and load/unload cassette support, connects to MES for data upload, and includes Type I for SiC etched wafers with TED/TSD/BPD dislocation labeling and statistics and Type II for polished SiC wafers with micropipe statistics and qualitative stress maps, both supporting 4, 6, and 8-inch wafers. The bevel-morphology system measures wafer diameter D, thickness T, bevel parameters X, Y, R, and A, and flat or notch geometry, while the stress-inspection system performs quantitative wafer-stress analysis from optical path difference, converts phase difference into visible brightness variation, produces a stress image in less than 10 seconds per wafer, and supports 4, 6, and 8-inch wafers; both can be configured for semi-automatic or fully automatic operation and MES data upload. Wafer-level electrical-characterization equipment measures key electrical parameters of Si, SiC, GaN, Ga2O3, Diamond, and dielectric layers by capacitance-voltage methods, including carrier concentration or resistivity, dielectric constant, breakdown voltage, and leakage current. The electrical-test lineup includes Coplane-200 and MCV-200 semi-automatic mercury-probe CV platforms for samples up to 200 mm, MCV-200R and MCV-300R fully automatic CV/IV platforms with EFEM, MES and OHT options for 150/200 mm or 300 mm production-level inspection, and the MCV-300 semi-automatic platform for 300 mm samples; functions across the lineup include automatic testing, real-time data monitoring, SECS/GEM data, mercury-vapor filtration, with the automated models adding functions such as dual robot handling, load ports, pre-alignment, mercury-leak monitoring, calibration, optical leveling, and sorting. Crystal-growth offerings cover Czochralski (CZ), Float Zone, Slim Rod Puller, and VGF systems as well as quartz crucibles; PVA TePla CGS equipment serves Tier 1 wafer producers and, across the portfolio, can produce single-crystal ingots up to 18 inches in diameter and 500 Kg in weight. Named CZ systems include SC 28 MCz, specified with a maximum 32-inch crucible, up to 12-inch crystal diameter, up to 2500 mm crystal length, and up to 450 kg crucible charge, and CGS1218, designed for larger-diameter crystals with a maximum 915 mm crucible, maximum 450 mm crystal diameter, up to 2.1 m crystal length, and maximum 450 kg charge. Float Zone systems include FZ-30 / FZ-35 for ingots up to 8 inches in diameter and 2000 mm high, with automatic adjustment and protection systems and optional gas doping; SR-110 produces two 7-10 mm silicon slim rods in one process and avoids material loss compared with CZ preparation followed by sawing; FZ-14M converts miniature polysilicon rods into single crystal under argon for purity evaluation by spectroscopic analysis; and VGF Kronos is a VGF system for batch production of low-dislocation compound semiconductors below 6 inches with a 10-3 mbar to 40 bar working-pressure range. Quartz crucibles are available in customized dimensions, and quartz combines very low thermal expansion, high-temperature and wear resistance, chemical stability, electrical insulation, optical transmission, and mechanical properties for uses including electronics, semiconductors, communications, power, lighting, solar energy, defense, precision measurement, laboratory instruments, nuclear energy, and nanotechnology. Automated grinding and chamfering equipment includes surface grinder 72/860, chamfer grinder 72/852, radius grinder 72/856, combined grinding and chamfering machine 72/855, and SiC-ingot grinding and chamfering machine RG608-612; the systems provide combinations of manual and automatic loading, pneumatic clamping, edge or tool detection and calibration, immediate post-grinding quality evaluation, and model-specific handling ranges, with 72/860 rated at 40,000 bricks per year and about 10min/350mm and 72/855 at 31,000 bricks per year and about 14min/350mm under full-capacity conditions. Cutting equipment includes outer-diameter saws 72/360 and 72/454, band saw 72/375, and BS4000/320: 72/360 supports head-and-tail removal, segmentation, test slices, and recutting with ARPAT production-data acquisition and Microsoft SQL storage; 72/454 provides fully automated loading, positioning, cutting, and test-slice handling with kerf loss at or below 1.3mm and blade life of about 12000 to 15000 cuts; 72/375 cuts 210mm x 210mm mono- or multicrystalline silicon bricks with material loss below 1.3mm; and BS4000/320 supports 4-12inch ingots, 700-4000mm ingot lengths, 70mm-400mm segments, and automatic completion of head-and-tail cutting, test slices, and segmentation after a single setup. The ReiCat argon-recovery system reduces argon consumption by at least 80%, supports fully automatic remote operation, guarantees gas purity above 99.999%, offers 100m3/hr, 200m3/hr, and 400m3/hr processing capacities, and extends the recovery concept to other technical gases. Water-quality instruments are made in glass or plastic versions for measurements such as pH, redox potential, conductivity, and temperature, with standard and customized probes plus special cables, plugs, spirals, overflow indicators, and other accessories. Valve, actuator, and accessory offerings include pneumatic and electric actuators, positioners, limit-switch boxes, pressure boosters or reducers, solenoid valves, throttles, and silencers, with configurations for manual or automatic valves, consulting, configuration advice, training, and support; electric actuators can work with PLC, network, Bluetooth, and wireless-network interfaces and support phone or tablet operation, while the DV series has DNVGL certification for ships, naval vessels, and offshore wind and received a French Navy tugboat supply contract in 2020. Cutting-wire products include high-carbon steel cutting wire for multi-wire cutting of polysilicon, gallium arsenide, indium phosphide, silicon carbide, quartz, and other hard crystals, reducing material loss while improving efficiency, capacity, and precision, and diamond wire in resin wire, electroplated wire, and diamond-rope forms for large, hard, brittle materials, shortening cutting time, eliminating slurry, simplifying waste treatment, improving slice-thickness uniformity, lowering processing cost, and reducing environmental impact. Isostatic graphite offerings include blocks as large as 3000*610*512 mm rectangular material and D1380*1100 mm round material, ash content of 30 ppm on request or below 5ppm for semiconductor and other special applications, and material uniformity intended to support longer product life and more stable heater-resistance control. Customized graphite products and parts cover semiconductor crystal growth with heat-field materials of 36 inches or larger and graphite impurity below 5 ppm, SiC crystal-growth parts such as seed holders, crucibles, and heaters, ion-implantation and plasma-etching components such as electrodes, slit plates, baffles, and protection plates, and epitaxy equipment for LPCVD, MOCVD, and VPE with graphite susceptors, heaters, trays, and gas-distribution parts over 32 inches and optional PyC, TaC, or SiC coatings; the integrated capability spans product design, material manufacturing, precision machining, coating, and post-processing. Other graphite products include PYROC® porous graphite P401 for high-temperature uses such as SiC crystal growth with purity at the 5ppm level; PYROC® graphite adhesive for bonding graphite, carbon, and carbon-fiber products, usable up to 350℃ in air and 3000℃ in inert gas or vacuum; PYROC® soft insulation felts SG-10 and SG-12 with carbon content above 99.99% and ash at or below 20 ppm; graphite powders CPN29N5 and CPN50N5 with purity at or below 5 ppm; PYROC® TaC coating with 5 ppm purity, high-temperature corrosion resistance and wear resistance; and PYROC® PyC coating with 2.24 g/cm³ density, hexagonal crystal structure, and 5 ppm purity. For compound-semiconductor materials, WBG materials including SiC and GaN support high-voltage, high-current, high-heat-dissipation, and high-frequency operation, with applications in power electronics and 5G high-frequency systems and benefits in energy utilization and conversion-loss reduction. SiC crystal-growth equipment covers mass-production methods including HTCVD and PVT, with PVA TePla's SiCube for HTCVD SiC single-crystal growth and baSiC-T for 4-6 inch SiC single-crystal mass production. SiC substrate offerings include semi-insulating and conductive single-crystal wafers for high-frequency and high-power devices, can ship MPD<1 wafers, and include 4-inch high-purity semi-insulating, 4-inch 4H-SiC N-type, and 6-inch 4H-SiC N-type specifications covering dimensions, orientation, micropipe density, resistivity, thickness, bow or warp, surface treatment, and defect limits. GaN products include 2-inch thick-film GaN-on-sapphire wafers in n-type doped, undoped, and semi-insulating forms; 2-inch free-standing GaN substrates; small square free-standing GaN wafers; small non-polar and semi-polar free-standing GaN wafers; and 4-inch thick-film GaN wafers, with named models including GaN-T-C-U-C50, GaN-T-C-N-C50, GaN-T-C-P-C50, GaN-FS-C-U-C50, GaN-FS-C-N-C50, GaN-FS-C-SI-C50, GaN-FS-C-U-S10, GaN-FS-C-N-S10, GaN-FS-C-SI-S10, GaN-FS-A-U/N/SI-S, GaN-FS-M-U/N/SI-S, GaN-FS-SP-U/N/SI-S, GaN-T-C-U-C100, and GaN-T-C-N-C100. The AlN offering includes the 2-inch AlN-T-C-C50 thick-film wafer at Ф 50.8 ± 0.1 mm and 4±1.5µm thickness, C-plane (0001) orientation, Semi-Insulating conductivity type, XRD FWHM below 350 arcsec for (0002) and below 450 arcsec for (1012), Ra below 5 nm over 10 x 10 µm2, an AlN on sapphire (SSP) structure, and Exclusion zone below 2 mm. SiC-on-SiC epitaxial wafers are offered for devices including Shockley diode, MOSFET, JFET, BJT, Thyristor, GTO, and IGBT, with 4H-SiC specifications for 150mm, 100mm, and 76.2mm off-axis substrates, n-type nitrogen or p-type aluminum doping, 0.2-100µm thickness, and product limits including 2mm*2mm die yield at or above 95%, edge chips at or below 2 with radius 1.5mm, total scratches at or below 10 lines with combined length below the wafer diameter, and backside cleanliness of 100% clean; the offering also names GaN on SiC epitaxial material. High-purity CVD SiC material is specified at 5N 99.999% by GDMS with plasma-corrosion resistance, durability in high-temperature ammonia, thermal-shock resistance, high thermal conductivity, a high stiffness-to-weight ratio, fine-grain structure, and no pores, for semiconductor components in high-temperature or high-erosion environments, rapid thermal processing and etching rings, plasma etching, MOCVD, and SiC crystal-growth feedstock, including customizable 1-30mm particles in low-nitrogen and standard grades.

Capabilities and products

• Supply of wafer BOW, WARP, TTV, LTV and thickness measurement equipment
• Supply of SiC wafer defect inspection equipment
• Supply of wafer chamfer profile measurement equipment
• Supply of wafer stress distribution measurement equipment
• Supply of mercury-probe CV/IV measurement equipment, including coplanar types
• Supply of Czochralski (CZ) crystal growth furnaces (PVA TePla)
• Supply of float-zone crystal growth furnaces (PVA TePla)
• Supply of silicon slim-rod pulling equipment
• Supply of float-zone sample preparation equipment for polysilicon purity analysis
• Supply of vertical gradient freeze (VGF) crystal growth equipment
• Supply of customized quartz crucibles
• Supply of silicon brick surface grinding equipment
• Supply of silicon brick chamfering and rounding equipment
• Supply of grinding and chamfering equipment for 4–12 inch SiC ingots
• Supply of outer-diameter saw cropping equipment for silicon ingots
• Supply of band-saw cutting equipment for silicon ingots and bricks
• Supply of argon recycling systems (ReiCat)
• Supply of pH water-quality probes
• Supply of oxidation-reduction potential water-quality probes
• Supply of water conductivity probes
• Supply of water temperature probes
• Supply of pneumatic valve actuators
• Supply of electric valve actuators
• Supply of valve positioners
• Supply of valve limit switch boxes
• Supply of pressure boosters
• Supply of valve gear reducers
• Supply of solenoid valves
• Supply of throttle valves
• Supply of silencers
• Supply of steel wire for crystal multi-wire sawing
• Supply of diamond cutting wire
• Supply of high-purity isostatic graphite materials
• Supply of graphite hot-zone components for semiconductor crystal growth
• Supply of graphite components for ion implantation and plasma etching
• Supply of graphite components for LPCVD, MOCVD and VPE epitaxy
• Supply of porous graphite (PYROC®)
• Supply of graphite adhesive (PYROC®)
• Supply of soft insulation felt (PYROC®)
• Supply of graphite powder
• Supply of TaC-coated graphite products (PYROC®)
• Supply of PyC-coated graphite products (PYROC®)
• Supply of SiC-coated graphite components
• Supply of industrial valves
• Supply of HTCVD SiC crystal growth furnaces (PVA TePla)
• Supply of PVT SiC crystal growth furnaces (PVA TePla)
• Distribution of semi-insulating SiC single-crystal substrates
• Distribution of conductive SiC single-crystal substrates
• Supply of 2-inch and 4-inch GaN thick-film wafers
• Supply of free-standing GaN substrates, including nonpolar and semipolar orientations
• Supply of 2-inch AlN thick-film wafers
• Supply of GaN on SiC epitaxial wafers
• Supply of 5N high-purity CVD SiC bulk material
• Supply of CVD SiC semiconductor equipment components
• Customized supply of 1–30 mm CVD SiC crystal growth feedstock
• Supply of graphite purification systems (PVA)
• Supply of 3-, 4-, 6- and 8-inch SiC epitaxial wafers
• Supply of fully automatic and semi-automatic batch wafer cleaning equipment
• Supply of single-wafer wet stripping equipment
• Supply of single-wafer scrubbing equipment
• Supply of final cleaning equipment for SiC epitaxial wafers
• Supply of patterned-wafer AOI inspection equipment
• Automated valve configuration and customized integration services

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