JEOL Ltd.

Exhibitor at SEMICON Taiwan 2026 · Booth K2160

Booth K2160Country JP8 product topics
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BoothK2160
CountryJP
Websitewww.jeol.com
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JEOL Ltd. lists TEM and SEM microscopes for semiconductor inspection and describes semiconductor work involving SiC and GaN, advanced transistor structures and 3D packaging technologies as requiring precise characterization and appropriate preprocessing and analytical instruments to support manufacturing yield and device reliability. JEOL Group Companies operate in three business segments: Scientific and Metrology Instruments, Semiconductor and Industrial Equipment, and Medical Equipment. Originating in electron-microscope development, JEOL Ltd. says it has supported researchers around the world including Nobel Prize winners and provides scientific and metrology solutions in fields such as nanotechnology and biotechnology; its electron-optics portfolio includes transmission and scanning electron microscopes, electron probe micro analyzers, photoelectron spectrometers, Auger micro probes, electron-microscope peripherals, soft X-ray emission spectrometers, focused ion beam systems, CROSS SECTION POLISHER™, energy-dispersive X-ray fluorescence spectrometers and electron diffractometers. Its analytical instruments include NMR spectrometers, electron spin resonance spectrometers and mass spectrometers covering MALDI time-of-flight, gas chromatograph and liquid chromatograph configurations. For semiconductor and industrial applications, JEOL Ltd. provides electron beam lithography systems, electron beam sources for evaporation and industrial equipment used in optical-parts manufacturing, including high-power electron beam sources and power supplies, electron beam deposition sources and power supplies, bombardment deposition sources, plasma sources, powder feeders and electron beam metal 3D printers, with electron beam and plasma sources used in thin-film formation and material processing. JEOL Ltd. also introduces cryo electron microscopes capable of observing inside biomolecules, along with electron diffraction, nuclear magnetic resonance and mass spectrometry instruments that support molecular biology and drug discovery. Its medical equipment includes the BioMajesty™ Series clinical chemistry analyzer, which uses micro volumes of samples and reagents to reduce medical costs and benefit patients, institutional running costs, medical development and the maintenance of human health, and JEOL Ltd. also lists rack handlers and laboratory information systems. JEOL Ltd. provides support services for customers using its products.

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For semiconductor applications involving SiC, GaN, advanced transistor structures and 3D packaging, JEOL Ltd. presents electron microscopes and electron beam lithography systems, alongside scientific instruments such as NMR spectrometers and mass spectrometers, and emphasizes precise characterization and appropriate preprocessing and analytical instruments for manufacturing yield and device reliability. Its electron beam lithography lineup includes JBX-A9 Series, JBX-8100FS Series, JBX-3200MVS and JBX-3050MV/S main units, plus the SB-89010EUVC EXCIMER UV CLEANER(FOR WAFER) option; LSI patterns can be 10 nanometers (1/10,000th of a hair) or less, and electron beam lithography systems are used to process such fine circuits. JEOL Ltd. expects electron beam lithography systems to take an increasingly important role as semiconductor demand expands with IoT society and 5G. JBX-A9 Series is a high-precision, high-throughput direct-writing system built around JEOL electron optics for stability, accepts wafers up to 300 mm, can optionally use FOUP, can extend in-line to coaters and developers, is designed for low power consumption and ease of use, and lists DFB Laser / Nanoimprint, Metalens, Lens Arrays, T-Gate and Photonic Crystal applications. JBX-A9 Series specifies 100 kV accelerating voltage, 1000 μm maximum field size, 0.25 nm minimum increment, ±9 nm stitching and overlay accuracy, ≦8 nm minimum line width, 50 pA to 400 nA beam current, 200 MHz maximum scanning speed and 0.15 nm stage-positioning resolution. Its automatic corrections include Dynamic Focus, Dynamic stigmatism and Deflection Distortion Correction; maximum sample sizes include a 300 mm wafer and 9 inch mask, power consumption is 5 kVA, and the listed footprint is 7.4 m × 5.3 m × 2.7 m (H). The basic configuration lists the Basic Unit, 10 Cassettes Auto Loading System, Control Program with CPU System, Additional License for Data Preparation Program and Remote Control OL Aperture, while options include an in-situ Optical Microscope, FOUP Wafer Auto Loading System, Open Cassette 200 mm Wafer Auto Loading System, 48kV High Voltage Program, Custom Cassettes, SECS/GEM, Air Conditioner and EMI cancellation system. JBX-8100FS is a spot-type electron beam lithography system designed for high throughput with a smaller footprint and lower power use; the standard system occupies 4.9 m (W) x 3.7 m (D) x 2.6 m (H), normal operation is approximately 3 kVA, about 1/3 of conventional systems. It provides high-resolution and high-throughput exposure modes for work from ultra-fine processing to small- and mid-size production, minimizes exposure idle time, and raises maximum scanning speed by 1.25 to 2.5 times to 125 MHz. JBX-8100FS lists G1 entry and G2 full-option versions, with optional accessories for G1; an optional optical microscope can inspect sample patterns without exposing resist to light, a signal tower is standard for visual monitoring of system operation, and stage positions are measured and controlled in 0.6 nm steps or 0.15 nm with an optional upgrade. A Linux® operating system and new graphic user interface support system control, the data-preparation program supports Linux® and Windows®, and the 200 kV G3 configuration uses Gaussian beam optics on a modular, upgradeable platform for applications from advanced nanostructures and compound-semiconductor devices to holography, gray scale and micro-lens arrays. In a comparison using 10um-thick PMMA resist, a 500um field, 2um pattern width and Si substrate, 200 kV reduced tapering relative to 100 kV; the listed doses are 3,000 μC / cm2 at 100 kV and 5,000 μC / cm2 at 200 kV. Across G1, G2 and G3, the writing method is spot beam, vector scan, step and repeat, beam current is 5 × 10-12 to 2 × 10-7 A, maximum scanning speed is 125 MHz and stage travel is 190 mm × 170 mm; acceleration-voltage options are 100 kV for G1, 100 kV / 50 kV for G2 and 200 kV / 130 kV / 100 kV / 50 kV for G3. Maximum field size is 1,000 μm × 1,000 μm for G1 and 2,000 μm × 2,000 μm for G2 and G3; overlay and stitching accuracy are ≦±9 nm for G1 and G2 and ≦±8 nm for G3, and normal electric requirements are 3kVA. The system supports a maximum 200mmΦ wafer, 6 inch mask blanks and small samples of any size; substrate transfer is a Single auto loader for G1 and a 12 cassettes auto loader for G2 and G3, and major installable options include an Optical microscope, 25 kV high voltage program, an additional Data preparation program license and a High resolution laser beam control system. JBX-3200MVS is a variable-shaped 50 kV electron beam lithography system with a step-and-repeat specimen stage for mask making at 32 nm to 28 nm nodes, designed for high speed, precision and reliability. Its writing-dose modulation and overlay-writing functions support corrections for legacy masks and reticles; JEOL Ltd. lists captive and merchant mask shops in Japan and overseas without customer names, with stitching accuracy of ≦±3.5 nm and overlay accuracy of ≦±5 nm. JBX-3050MV/S is a variable-shape 50 kV electron beam lithography system with a step-and-repeat stage for mask and reticle fabrication up to a 45 nm node design rule, with high-speed, high-accuracy and high-reliability pattern writing, ≦±3.8 nm stitching accuracy and ≦±7 nm overlay accuracy.

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