At a glance
| Booth | I3000 |
| Country | GB |
| Website | www.icemostech.com |
Company profile
IceMOS Technology Ltd specializes in Advanced Power Electronics, Silicon Engineered Substrates, and Silicon Sensing Elements for global markets, with proprietary MEMS-based technologies that include mSJMOS™, mSJMOSCD™, and JEDIFET™. Its power technology combines MEMS manufacturing techniques with mature-node CMOS processing to deliver high-performance power MOSFETs for data centres, electric vehicles, AI hardware, and renewable energy systems, with the company describing performance comparable to Silicon Carbide (SiC) devices at a fraction of the cost together with efficiency and CO2-reduction benefits. For Silicon Engineered Substrates, IceMOS Technology Ltd offers technologies including mCSOI™ and mRFSOI™ for automotive ADAS, aerospace, wearable-tech, and high-speed communications. The company operates a vertically integrated manufacturing facility in Belfast and reports an IP portfolio of 70+ patents. It also reports zero field failures in over 100 million ADAS sensors, strategic partnerships with industry leaders, a decade-long growth plan, and a sustainability focus associated with safer, smarter, and more efficient semiconductor solutions. IceMOS Technology Ltd is a supplier of 100-200mm thick-film SOI and SiSi wafers for IC and MEMS applications and describes more than 20 years of SOI manufacturing experience together with a broad specification range. Its manufacturing and engineering approach covers cost-effective, high-performance Superjunction MOSFETs, MEMS solutions, Advanced Engineering Substrates, SOI substrates, and bonded silicon substrates. IceMOS Technology Ltd describes more than twenty years of expertise and manufacturing experience, with service extending from initial customer enquiry through product delivery. Its engineering team supports product development, design, and specialized services, and the company works directly with customers to develop a specialized product when a required solution is not already offered. The company supplies tailor-made silicon wafers for sensor and semiconductor industries in 100mm, 125mm, 150mm, and 200mm diameters and can transfer technology used for small-diameter prototyping to larger-diameter wafers. IceMOS Technology Ltd also provides foundry services when a process is beyond a customer's in-house capabilities, with processes operated in an ISO/TS 16949 manufacturing environment, controlled by Statistical Process Control (SPC), and managed within contamination standards required by advanced CMOS. Its SOI and MEMS support is backed by a team with many years of SOI design and manufacturing experience that develops MEMS or SOI solutions to suit customer requirements.
Exhibits
IceMOS Technology Ltd maintains inventory of 100-200mm wafers in a wide variety of specifications, manufactures in Belfast, Northern Ireland, and supplies customized Superjunction MOSFETs, MEMS solutions, and Advanced Engineering Substrates. Its thick-film SOI dielectric-isolation technology provides high-voltage isolation between components on the same chip by combining thick-film SOI with high-aspect-ratio deep-trench etching and oxide/poly refill, and is available on wafer sizes from 100mm to 150mm with silicon device layers from 1.5um to 100um. The Superjunction MOSFET offering combines Silicon MOSFET technology with MEMS process technology to form a high-voltage MOSFET architecture intended to advance MOSFET performance. The listed Superjunction characteristics include low on-resistance, ultra-low gate charge, high dv/dt capability, high avalanche (UIS) characteristics, high peak current, and enhanced transconductance characteristics. Listed Superjunction applications cover power supplies; IT hardware such as data centres, servers, cloud systems, notebooks, and tablets; HID and LED lighting ballasts; LED television drivers and power supplies; solar inverters; electric and hybrid vehicles; and fast EV chargers. The Superjunction selection includes 600V, 650V, 700V, and 730V devices and package options including TO220 (Non-Isolated), TO220 Fullpak (Isolated), TO247, D2PAK / TO263, DPAK / TO252, I2PAK / TO262, and IPAK / TO251. For Superjunction product data sheets, IceMOS defines its lead-free marking as no intentional use of lead (Pb) and lead levels below 1000ppm (0.1wt%) in constituent materials and finished products. For bonded BSOI and CSOI wafers, IceMOS Technology Ltd offers high-resolution SAM (Scanning Acoustic Microscope) imaging and can provide the same service for customer-owned bonded wafers as a non-destructive method for imaging the bonded interface. Its SAM inspection describes a delamination detection limit around 10µm in lateral size with delaminated height around 15nm, and whole-wafer scanning from 100mm to 200mm wafer diameters with pixel size as small as 20 µm, with higher-resolution scans available for selected wafer areas. The company supplies 100mm, 125mm, 150mm, and 200mm silicon wafers and supports process-specific tailoring for sensor and semiconductor applications. Customers can also use IceMOS foundry services to complete processes that are outside their own capabilities, alongside technical support for MEMS and SOI development. Across these offerings, IceMOS Technology Ltd covers power-electronics devices, MEMS solutions, thick-film SOI and SiSi wafers, bonded and engineered substrates, inspection, and foundry support for semiconductor, IC, MEMS, sensing, and related high-voltage applications.
Capabilities and products
- 100-200mm thick-film SOI and SiSi wafer supply
- custom high-performance Superjunction MOSFETs
- MEMS Superjunction high-voltage MOSFET
- on-chip high-voltage dielectric isolation technology
- 100/125/150/200mm silicon wafer supply
- semiconductor unit-process foundry services
- high-resolution SAM scanning for 100-200mm wafers
- SAM inspection service for customer-owned bonded wafers
- custom MEMS / SOI solution development
- mCSOI™ / mRFSOI™ silicon engineered substrates
- SOI and bonded silicon substrate supply
- co-development of custom semiconductor products