At a glance
| Booth | Q6134 |
| Country | JP |
| Website | fox-tech.co.jp |
Company profile
FOX Co.,Ltd. is establishing low-cost, high-efficiency manufacturing technology for gallium oxide semiconductor substrates and is collaborating with Tohoku University on high-quality gallium oxide, a promising wide-bandgap semiconductor, with the OCCC method as its central crystal-growth technology. Its proprietary OCCC method, Oxide Crystal growth from Cold Crucible, grows crystals without precious-metal crucibles and replaces the expensive iridium used in conventional crystal growth with inexpensive materials such as copper and water, targeting significant cost reduction while maintaining high quality. FOX specializes in wafer and material manufacturing in an area with limited players, describes Japan as holding the initiative in wafer manufacturing, and sees difficult alternative-technology development as a basis for preserving competitive advantage over the long term while allowing a wafer-focused business to serve many semiconductor suppliers as customers. The company positions the OCCC method as a sustainable manufacturing technology for β-Ga2O3 wafer production because eliminating precious-metal crucibles can improve life-cycle assessment, increase material-utilization efficiency, and reduce environmental impact in manufacturing processes for next-generation power semiconductors. By advancing the social implementation and wider adoption of β-Ga2O3 power semiconductors, FOX aims to address power loss associated with conventional Si semiconductors, support environmentally conscious power-semiconductor technology, and contribute from the power sector to carbon neutrality by 2050; its Japanese description also links high-quality, low-cost β-Ga2O3 substrates with power-device development for electric-vehicle and renewable-energy infrastructure markets. FOX further states that its responsibility is to refine mass-production technology for high-quality β-Ga2O3 bulk single-crystal substrates until both quality and cost reach a stage suitable for practical social implementation, entering the power-semiconductor market as a manufacturer developing wafer manufacturing and processing technology; it also notes that its researchers have published numerous papers and directs readers to work on the OCCC method.
Exhibits
The manufacturing scope includes crystalline materials and semiconductor products, with β-Ga2O3 crystal growth using the OCCC method as a named capability and with development directed toward gallium oxide semiconductor substrates for power-semiconductor applications. The described wafer-production flow runs from ingot and single-crystal manufacturing through lapping and polishing to film deposition and a completed wafer, followed by use by foundry semiconductor manufacturers; the company also shows a β-Ga2O3 wafer in an 8mm×10mm format and identifies β-Ga2O3 bulk single-crystal manufacturing and mass-production technology as a development focus. For next-generation power semiconductors, FOX describes β-Ga2O3 as a wide-bandgap material intended to enable high-efficiency power conversion and is working with power-semiconductor developers to move high-quality, low-cost substrates toward practical mass production and broader implementation. The terminology used with this work defines OCCC as Oxide Crystal growth from Cold Crucible, LCA as Life Cycle Assessment, and NICHe as New Industry Creation Hatchery Center, identified as the Collaborative Research Center for Future Science and Technology.
Capabilities and products
- β-Ga2O3 crystal growth using the OCCC method
- gallium oxide semiconductor substrate manufacturing technology
- manufacturing of crystalline materials and semiconductor products
- semiconductor wafer polishing