At a glance
| Booth | I2400 |
| Country | KR |
| Website | www.cmtx.co.kr |
Company profile
CMTX Co., Ltd. was established in January 2013 and began with manufacturing and lapping or polishing sapphire and ceramic parts. It developed into a specialist in high-functional sapphire and ceramic parts and materials for semiconductor, display, defense and medical industry machines; for industrial sapphire parts, it describes its machining, lapping, polishing and surface-finishing technology as top level in Korea and cites bonding and micro-machining as technologies developed through continuing R&D. Since establishment, CMTX Co., Ltd. has concentrated on high-hardness precision parts for semiconductor equipment and reports notable growth in this area during its first five years, supported by employees sharing the company's future and vision, prioritizing promises to customers, and management investment in R&D for product-quality innovation and new-product development. The company plans to develop new materials and parts, develop products for cost reduction and yield enhancement, diversify exports, create new markets, and fulfill social responsibility. CMTX Co., Ltd. describes an end-to-end value chain spanning materials, processing, recycling and R&D and says it is concentrating R&D investment on securing core Top Technology. To address import and export trade-regulation risks involving countries including China and Japan, it is pursuing material self-reliance and localization to secure its own value chain and original technologies. Its sites are described as using automated processes and SMART FACTORY systems, including automated Cleaning / Etching, Manufacturing Execution System, Quality Management System and Enterprise Resource Planning, with AI process adoption under review. The company lists 천안 소재공장, C Campus(구미 1공장), M Campus(HEAD OFFICE, 구미 2공장), and T Campus(HEAD OFFICE, 구미 3공장). Its recycling business is described as joint development with domestic and overseas Major Chip Maker customers for repeated recycling, supporting environmental protection and ESG. Based on 천안 소재 중앙연구소, CMTX Co., Ltd. conducts R&D on semiconductor materials and parts from materials through processing-process development and recycling, and is increasing investment in three-dimensional measurement equipment, non-contact roughness measurement, automated cleaning and etching equipment, and process automation.
Exhibits
CMTX Co., Ltd. is a precision-machining specialist with an integrated production system from materials through components based on semiconductor core materials including silicon, ceramic, quartz and sapphire. Semiconductor silicon parts are used mainly as consumable parts inside etching-process chambers, with use increasing in high-performance and fine-patterning processes; their heat resistance and plasma resistance and lower process contamination than metal are described as protecting equipment from plasma and chemical reactions and helping prevent contamination. CMTX Co., Ltd. receives a stable supply of Si ingots produced by subsidiary 셀릭, supplies Si parts in Korea and other countries, and produces both single-crystal and polycrystalline silicon in-house to provide customized response together with integrated quality, delivery and technical support. For single-crystal versus polycrystalline silicon, the listed properties are density about 2.329 versus about 2.32~2.33 g/cm³, thermal conductivity about 149 versus about 80~120 W/m·K, bandgap about 1.12 eV at 300K for both with more crystal defects in polycrystalline material, specific heat about 700 J/kg·K for both, thermal expansion coefficient 2.6 × 10⁻⁶ /K versus about 2.5~2.7 × 10⁻⁶ /K, electrical resistivity 10⁴~10⁶ Ω·cm for both, and mechanical strength about 7000 MPa for single crystal with tensile strength depending on direction versus an average 200~400 MPa for polycrystalline material. Silicon products include Silicon C-Shroud Ring and Silicon Outer Ring for protecting the wafer edge, supporting wafer yield, stabilizing chamber gas distribution and the plasma region, and blocking or reducing particles; Silicon Electrode for plasma generation, wafer support and uniform plasma distribution; and Silicon Curved Electrode with a convex or concave structure for controlling electric-field distribution or plasma density. Quartz parts are high-purity SiO2 consumables with heat, corrosion and chemical resistance for high-temperature and high-cleanliness environments, including CVD, Diffusion, RTP and Wet Cleaning processes. The listed quartz properties are SiO₂ ≥ 99.99%, density 2.2, hardness about 5.5–6.5, tensile strength about 48, flexural strength about 50–70, thermal expansion coefficient 5.5 × 10⁻⁷ at 20–1000°C, thermal conductivity 1.3 at 25°C, specific heat 0.67 at 25°C, softening point about 1665°C, continuous-use temperature about 1100–1200°C, dielectric constant 3.75 at 1 MHz, electrical resistance above 10¹⁶ at 20°C, optical transmission over the UV-to-IR range listed as 1803500 nm 이상, and resistance to acids, bases and organic solvents except HF. Quartz products include Quartz Ring for chamber protection, gas-flow control and prevention of chamber-wall metal corrosion; Quartz Window for chamber observation and optical transmission; and Quartz Insert / Liner for protecting and lining the chamber inner wall. Sapphire parts are single-crystal alumina Al₂O₃ consumables with heat, corrosion and chemical resistance for plasma, high-temperature and high-voltage environments and are used in semiconductor processes including ETCH, CVD and RTP. The listed sapphire properties are Al₂O₃ synthetic single crystal with a trigonal hexagonal or rhombohedral R3c crystal structure, density about 3.98 g/cm³, Mohs hardness 9, tensile strength about 300–400 MPa at 25°C, compressive strength about 2.0–2.1 GPa, Young’s modulus about 345–400 GPa depending on direction, thermal expansion coefficient about 5.3–7.5 × 10⁻⁶ /K as a directional average, thermal conductivity 35 W/m·K on average, and specific heat about 750 J/kg·K. Sapphire products include Sapphire Window for observation or optical transmission in high-temperature and high-vacuum environments with high UV-to-IR transmission and scratch resistance; Sapphire Tube / Rod for high-temperature gas or chemical transfer lines with corrosion resistance and insulation suited to plasma processes; and Sapphire Sleeve / Tube / Shaft for precise fluid control, insulation and support in high-temperature, high-vacuum, plasma and chemical-reaction environments. Ceramic materials are grouped into oxide, nitride and carbide systems, with examples including Al2O3, ZrO2, Y2O3, AlN and SiC, and are listed for processes including ETCH, CVD/ALN, RTP and IMPANT. For Al₂O₃, SiC, Y₂O₃ and ZrO₂ respectively, the listed densities are 3.9-4.0, 3.1-3.2, about 5.0 and 5.6-6.1 g/cm³; Mohs hardness values are 9, 9-9.5, 5-6 and 6-7; thermal conductivities are 20-30, 120-270, 10-12 and 2-3 W/m·K; thermal expansion coefficients are 7-8, 4-5, about 8 and 10-11 ×10⁻⁶/K; specific heats are 0.88, 0.67, 0.3-0.5 and 0.3-0.4 J/g·K; maximum use temperatures are 1700°C, 1600°C, 2400°C and 1200°C, with the table also listing electrical insulation, chemical resistance and wear resistance for each material. The ceramic-parts table associates Al₂O₃ with insulating parts and wafer supports, SiC with Shower Head, Susceptor, Focus Ring and Heater Cover, Y₂O₃ with ESC insulating layers and Liner, and ZrO₂ with Valve, Nozzle and Shaft. Ceramic products include Ceramic Nozzle for uniform CVD reaction-gas delivery and plasma balance with lower particle and corrosion risk than metal nozzles; Ceramic Ring for film uniformity and insulation near the wafer edge together with plasma uniformity and metal protection; SiC Wafer with electrical and thermal properties described as superior to ordinary Si wafer; and Y2O3 Ring with corrosion resistance, high dielectric constant and plasma resistance for etch uniformity and plasma protection. Its One-Stop process covers Si material preparation from ingots produced by 셀릭, surface grinding for thickness, diameter and flatness, shape machining and drilling for holes, angles and slots, process measurement including three-dimensional and non-contact measurement, etching for DoD removal and surface treatment, polishing and lapping for roughness and fit or chipping removal, final cleaning for particle removal, and final inspection and vacuum packaging.
Capabilities and products
- Monocrystalline and polycrystalline silicon manufacturing
- Silicon ingots for semiconductor components
- Silicon chamber protection rings
- Silicon electrodes, including curved electrodes
- Quartz rings
- Quartz windows
- Quartz liners and inserts
- Sapphire optical windows
- Sapphire tubes
- Sapphire rods and shafts
- Sapphire sleeves
- Ceramic gas nozzles
- Ceramic rings, including Y2O3 rings
- SiC wafers
- Precision machining of silicon, ceramics, quartz and sapphire
- Sapphire lapping, polishing and surface finishing
- Surface grinding of silicon components
- Shape machining and drilling of silicon components
- Silicon component etching and surface treatment
- Silicon component lapping and polishing
- Particle cleaning of silicon components
- Three-dimensional and noncontact component measurement
- Material and component recycling
- Sapphire bonding
- Sapphire micromachining