At a glance
| Booth | T9404 |
| Country | SE |
| Website | www.alixlabs.com |
Company profile
AlixLabs is a Swedish semiconductor equipment company founded in 2019 and based in Lund, Sweden, with a focus on Atomic Layer Etching and its Atomic Pitch Splitting technology, APS™. The company describes itself as the world's only pure-play ALE company and states a mission of making semiconductor production in the ångström era more accessible, sustainable, and affordable. Its full-time team comprises twelve employees, supported by an additional 15 semiconductor industry heavyweights working with its global efforts, and the company lists 10 patents. AlixLabs maintains an advisory board populated by experienced semiconductor-industry professionals and identifies investor representation connected with Navigare Ventures, Industrifonden, and FORWARD.One. The company also identifies support from organizations including LU Ventures, I Love Lund, Polynom Investment, and Almi Invest, with LU Ventures described as providing critical infrastructural support. APS™ grew from patented research into a commercially oriented semiconductor-equipment platform designed to simplify advanced chip manufacturing by reducing patterning complexity, improving critical-dimension control, and supporting continued scaling for advanced logic and memory devices. AlixLabs has demonstrated APS™ on industry-relevant silicon, including 300 mm UMC wafers and Intel FinFET test silicon, and APS™ reduced half-pitch from 25 nm to 12.5 nm on demonstrated 300 mm wafers and Intel FinFET test structures. In 2026, AlixLabs advanced APS™ industrialization through a partnership with VDL ETG Projects and launched Sax Forma, its first commercially available APS™ system, marking a move from technology validation toward customer engagement, process integration, and deployment in advanced manufacturing flows. AlixLabs won the IC Taiwan Grand Challenge Smart Manufacturing category and is engaging Taiwan's semiconductor ecosystem around more cost-efficient scaling.
Exhibits
AlixLabs presents Atomic Pitch Splitting as a dry-etch process that splits the pitch of existing nanoscale line patterns through an extreme form of Atomic Layer Etching. The plasma-based cyclic dry-etch approach uses the sidewalls of nanoscale features as a topographical mask and is described as forming fine features with critical dimensions below 10 nm on silicon, dielectrics, and materials such as gallium phosphide. APS™ complements existing lithography and etch flows, including DUV and EUV lithography and self-aligned double and quadruple patterning, while reducing reliance on multiple complex lithography steps. The company states that APS™ can reduce process steps and increase throughput, lower capital investment, reduce energy consumption, and reduce the environmental impact associated with advanced semiconductor production. For leading-edge logic production, AlixLabs states that APS™ can drastically reduce consumption of power and water while also reducing emissions. AlixLabs designs its processes to slot into existing production workflows and identifies 300 millimeter logic and DRAM silicon wafers, including FinFET and GAAFET nanowire structures, as target environments. The same processes are described for 150 millimeter and 200 millimeter power-electronics wafers using materials such as gallium nitride and silicon carbide. The Sax Forma APS™ chamber is in a beta phase while its mass-production design is being finalized; demonstrations are run at the Lund headquarters and teams in Lund, Eindhoven, and Dresden are working on the mass-production gamma design. Sax Forma is also identified as the company's first commercially available APS™ system, supporting customer engagement, process integration, and industrial deployment while reducing patterning complexity. Beyond pitch splitting, AlixLabs' ALE Pattern Shaping selectively removes unwanted material, addresses surface defects, reduces surface roughness, and mitigates line-edge roughness as feature sizes move below 10 nm. Extreme ALE uses sequential, self-limiting chemical reactions to remove atomic layers one at a time, enabling controlled smoothing and selective removal of contaminants or surface defects without damaging the underlying material. For EUV-related processes, the pattern-shaping approach uses controlled anisotropic etching to smooth feature sidewalls and reduce line-edge roughness, supporting lower defect rates, higher yields, and improved device performance. ALE Surface Smoothening is developed to improve surface quality of GaN and SiC by removing material at atomic scale through self-limiting chemistry and plasma-generated ion bombardment. The company links this surface-smoothing capability to GaN and SiC transistors used in high-power and high-temperature applications such as power electronics and RF devices, with stated benefits including lower resistive losses, better thermal management, and more consistent performance. Application examples for ALE Surface Smoothening include power converters, electric vehicles, telecommunications infrastructure, and RF communication systems, where GaN and SiC devices require efficiency, reliability, and operation at higher voltages and temperatures.
Capabilities and products
- APS atomic pitch splitting technology
- pitch splitting by dry etching
- ALE pattern shaping
- ALE surface smoothening for GaN and SiC