At a glance
| Booth | S7446 |
| Country | CN |
| Website | en.zhlxsemicon.com |
Company profile
Zhonghuan Advanced Semiconductor Technology Co., Ltd. focuses on the research, development, and manufacturing of semiconductor materials and products for related industries. Driven by innovation, the company provides total solutions to customers worldwide and states an aim to become a world-leading supplier of semiconductor materials. Its Yixing Fab specializes in developing and manufacturing a full range of products from 8 to 12 inches. The 12-inch factory uses a dual "power + IC" strategy and has a stated production target of 700K slices per month, while the 8-inch factory focuses on logic and power chips. The company's described resource deployments include Yixing, Xuzhou, Tianjin, and Hohhot.
Exhibits
The product line includes polished wafers, epitaxial wafers, annealed wafers, chemically etched wafers, and SOI wafers in sizes from 4 to 12 inches, alongside one-stop customized services for silicon-based products. SOI silicon wafers are silicon-on-insulator wafers. Polished wafers are made from FZ, CZ, or MCZ silicon ingots through cutting, lapping, polishing, and other processes to obtain near-perfect surfaces that meet high flatness and surface-quality standards; depending on dopant concentration, they are classified as lightly doped or heavily doped. For polished wafers, the listed specifications cover 300mm MCZ/CZ material with <100>, <110>, or <111> orientation and N or P conductivity; 200mm MCZ/CZ material with <100> or <111> orientation and N or P conductivity; and sizes ≤150mm using CZ/FZ with <100> or <111> orientation and N or P conductivity. Epitaxial wafers are polished wafers with one or more additional layers formed through epitaxy, and those layers have specified dopant types, resistivity, thickness, and lattice structures. For epitaxial wafers, the listed specifications include 300mm MCZ/CZ material with <110> or <100> orientation and N or P conductivity, 200mm MCZ/CZ material with <100> or <111> orientation and N or P conductivity, and sizes ≤150mm using CZ with <100> or <111> orientation and N or P conductivity. Argon-annealed wafers are polished wafers heat-treated in an argon environment to produce a clean surface layer; the annealing process is described as removing impurities and eliminating surface defects, thereby enhancing device performance. Listed argon-annealed wafer specifications include 300mm MCZ material with <100> orientation and P conductivity, and 200mm MCZ/CZ material with <100> orientation and P conductivity. Lapped silicon wafers can be transformed into polished epitaxial wafers through polishing and other precision processes. The lapped-wafer specification shown is ≤150mm CZ/FZ material with <100> or <111> orientation and N or P conductivity. Etched silicon wafers are produced through mixed-acid etching that removes the stress-damaged surface layer to maintain high-quality monocrystalline characteristics. The etched-wafer specification shown is ≤150mm CZ/FZ material with <100> or <111> orientation and N or P conductivity. For FZ material, the listed features are high voltage and high current, with applications in high-voltage electric power, microelectronic devices, frequency converters, and voltage regulators. For heavily doped CZ material, the listed feature is energy efficiency, with applications including power switches, high frequency, optical sensors, and image sensors. For lightly doped MCZ material, the listed features are high storage density, high-performance computing, and low power consumption, with applications in memory chips, analog chips, and logic chips.
Capabilities and products
- FZ/CZ/MCZ polished silicon wafers
- epitaxial silicon wafers
- argon-annealed silicon wafers
- lapped silicon wafers
- mixed-acid etched silicon wafers
- one-stop customized services for silicon-based products