At a glance
| Booth | T9404 |
| Country | JP |
| Website | www.topologic.jp |
Company profile
TopoLogc develops a cache memory technology with 4x higher capacity compared to conventional technologies in the same chip area. TopoLogic's TL-RAM is MRAM based, allowing for smaller cell size while allowing L3 cache equivalent / GPU cache equivalent operating speeds by implementing topological antiferromagnets into the memory cells. The low current requirement and high speed switching capability allows for an energy efficient high density memory block architecture, which can be directly embedded into logic processors, in a similar way to embedded MRAM. TopoLogic also develops TL-SENSING, which can detect heat signatures with 100x response speed compared to conventional heat sensors. This allows for early detection of thermal runaway in rechargeable batteries, significantly increasing safety of battery systems. It can also be used in other applications where quick response times are needed.
Exhibits
Develops TL-RAM high-density cache-memory technology using MRAM and topological antiferromagnets, providing 4× higher capacity than conventional technologies in the same chip area while supporting L3/GPU-cache-equivalent speeds. Also develops TL-SENSING high-speed heat-signature sensing with up to 100× the response speed of conventional heat sensors.
Capabilities and products
- ultra-high capacity cache memory
- 4x higher capacity in the same chip area
- MRAM-based TL-RAM
- topological antiferromagnets in memory cells
- L3 cache and GPU cache equivalent operating speeds
- low current requirement and high speed switching
- directly embedded into logic processors
- TL-SENSING heat signature detection
- 100x response speed versus conventional heat sensors
- early detection of thermal runaway in batteries