At a glance
| Booth | T9404 |
| Country | JP |
| Website | www.topologic.jp/en |
Company profile
TopoLogic Inc. is a deep-tech startup established on July 15, 2021 to provide technologies based on topological materials; it originated from the University of Tokyo and works toward social implementation of new materials grounded in quantum mechanics. The company collaborates with the Nakatsuji Lab at the University of Tokyo on device development and partnerships with industrial companies, and states a mission of using topological materials to solve difficult industrial and global problems while contributing to a sustainable society. Its business activities cover research, development, design, manufacture, and sale of topological materials and devices using them, as well as development, design, manufacture, sale, and maintenance of related software and consulting for work and R&D involving topological materials. TopoLogic lists its head office at the University of Tokyo Entrepreneur Plaza and a development hub in Osaka, and reports capital of 100 million yen as of November 2024. Topological materials are described as having electronic structures and quantum characteristics that differ fundamentally from conventional materials, creating possibilities for sensors that capture heat, electromagnetic waves, chemical substances, sound, and other physical phenomena, and for devices that store and control physical phenomena. The company states that these materials can enable advanced energy visualization and energy saving, linking its material platform to energy-related challenges. TopoLogic develops TL-RAM™, a magnetic-memory technology based on MRAM and topological antiferromagnets, with a smaller cell concept and operating speeds described as equivalent to L3 cache or GPU cache. Its cache-memory concept is described as offering 4x higher capacity than conventional technologies in the same chip area, while low-current requirements and high-speed switching support an energy-efficient, high-density memory-block architecture that can be embedded directly into logic processors in a manner similar to embedded MRAM. TL-RAM™ uses the anomalous Hall effect produced by topological materials as a route toward lower-power memory while retaining characteristics associated with conventional magnetic memory, including non-volatility, resistance to environments such as radiation, and durability. TopoLogic presents TL-RAM™ for uses including primary cache memory, alternatives to conventional DRAM and SRAM, embedded memory in IoT devices, and enabling AI on edge devices, while also describing reduced power consumption in data centers as an intended benefit. The company also develops the heat-flux sensor TL-SENSING™, which it describes as identifying subtle heat anomalies in 0.01 sec and as detecting heat signatures with 100x response speed compared with conventional heat sensors. TL-SENSING™ applies the anomalous Nernst effect generated by topological materials, and its thin-film structure is described as enabling precise heat detection while using a film thickness of 1/1000 that of existing sensors, helping preserve design freedom in the products into which it is integrated. Applications listed for TL-SENSING™ include anomaly detection and failure prediction for batteries and power-semiconductor components, temperature-comfort control in vehicles and rooms, chemical and gas detection when combined with catalysts, factory thermal management and monitoring, and human-body monitoring. The faster heat response is also positioned for early detection of thermal runaway in rechargeable batteries, with the stated purpose of increasing battery-system safety, and for other applications requiring quick response. TopoLogic also presents a dual-heat-sink QFN-package version of TL-SENSING™ for use in IoT equipment and wearables. In 2025, the company was selected as a J-Startup Company, received the Japan Venture Awards SME Support Japan Chairman Award, and was selected for a NEDO program supporting practical R&D and mass-production demonstration for deep-tech startups in the GX field. Its 2024 record includes the Hello Tomorrow Global Challenge 2024 Industrial Biotech & New Materials win, an Academic Startups Early Edge Award, multiple startup-program selections and awards, and Series A financing totaling 700 million yen. The 2023 record includes a CEATEC AWARD 2023 startup-category semi-grand prix, Hello Tomorrow Japan Challenge Grand Winner, Hello Tomorrow Asia Pacific Challenge Runner-up, the start of TL-SENSING™ rentals, selection as a Deep Tech Pioneer, and additional startup-program awards and finalist selections. For 2022, the company records seed funding totaling 130 million yen and selection or awards in startup programs including the Innovation Leaders Summit and TECH PLANTER Deep Tech Grand Prix. In 2026, the company also records selection for a NEDO GX startup collaboration and procurement-acceleration program, an excellence award in the 38th Small and Medium Enterprise Excellent New Technology and New Product Awards, an excellence award at the Kumamoto Semiconductor Venture Pitch, and selection for the 2026 APAC Cleantech 25.
Exhibits
TL-RAM™ is presented as a magnetic-memory option for primary cache, replacement of conventional DRAM and SRAM, embedded memory in IoT equipment, and AI deployment on edge devices, with a focus on reducing memory-related power consumption. The MRAM-based TL-RAM architecture uses topological antiferromagnets, smaller memory cells, low-current operation, and high-speed switching to target L3-cache-equivalent or GPU-cache-equivalent speeds while increasing capacity within the same chip area. TL-SENSING™ is a heat-flux sensor for high-speed detection of subtle heat and anomalies, combining an anomalous-Nernst-effect thin-film sensing principle with a very thin structure and rapid response. For battery systems, the sensor is specifically positioned for earlier detection of thermal runaway in rechargeable batteries, while other listed semiconductor-related uses include anomaly detection and failure prediction for power-semiconductor components. Other stated TL-SENSING™ applications include thermal comfort control, chemical and gas sensing, factory thermal management, and human-body monitoring, and the company also offers a QFN-package configuration intended for IoT and wearable integration.
Capabilities and products
- TL-RAM magnetic memory development
- cache memory technology with 4x higher capacity
- TL-RAM with L3/GPU-cache-equivalent operating speeds
- memory directly embedded into logic processors
- TL-SENSING heat-flux sensor
- heat anomaly detection in 0.01 seconds
- early detection of thermal runaway in rechargeable batteries
- chemical and gas detection combined with catalysts
- R&D and manufacturing of topological materials
- topological-material R&D consulting services