At a glance
| Booth | J3255 |
| Country | CN |
| Website | www.naso-tech.com/About.html |
Company profile
Founded in October 2018, Shenzhen Naso Tech Co.,Ltd is located in the Overseas Students Entrepreneurship Park in Guangming District, Shenzhen and develops, manufactures, and sells high-end thin-film deposition equipment for advanced-material fields including third-generation semiconductor silicon carbide, new photovoltaic materials, and nanomaterials. Its product lines include silicon carbide epitaxy equipment, atomic-layer-deposition equipment, research-grade customized CVD equipment, and open roll-to-roll graphene preparation equipment, with application fields including photovoltaic perovskite, third-generation semiconductors, and two-dimensional materials. Its core team is built around PhDs, researchers, and senior industry experts from the University of Cambridge and has technical accumulation in thin-film deposition equipment, high-end equipment, and advanced-material manufacturing processes. The company was rated a high-growth "National High-tech Enterprise" in 2020, received national specialized and innovative "Little Giant" recognition in 2024, and received the "Golden Bull Sci-Tech Innovation Enterprise Award" in the high-end equipment field in 2025. It lists 20+ years of technical accumulation and 100+ technical patents. It also has experience in advanced semiconductor manufacturing equipment including CVD, MOCVD, ALD, and ETCH.
Exhibits
Silicon Carbide (SiC) epitaxy systems are dedicated to epitaxial-layer growth, a core process in SiC chip manufacturing and a critical step for power electronic devices such as diodes and power semiconductors, and they are compatible with 200mm / 150mm wafers. An innovative planar chamber design reduces graphite consumable costs, while 5-zone gas inlets allow independent C/Si ratio adjustment for flexible process tuning. ALD systems use self-limiting surface chemistry to maintain high film uniformity during high-rate deposition, and their gas showerhead combines a high-density hole layout with proprietary gas-diffusion paths for uniform and rapid surface coverage. SKY-P42R05 (8”x2) is a fully automatic dual-chamber SiC epitaxy system with coordinated dual-reaction-chamber operation, independently controlled process parameters, AGV and overhead-crane compatibility, freely combinable NH3, N2, and TMAL modules, SEMI certification, and proprietary intellectual property. SKY-P40R02 (8”x1) is a single-chamber SiC epitaxy system using a horizontal hot-wall route with a multi-zone gas-inlet system that improves epitaxial-wafer uniformity and reduces the epitaxial defect rate; it uses fewer graphite chamber parts, a simplified structure, and a distinctive gas-inlet and wafer-transfer method intended to reduce epitaxial fallout. For SKY-P40R02, maintenance involves polishing flat graphite parts and opening the rear chamber flange without separating the transfer chamber, while 5-zone gas delivery independently controls ethylene and trichlorosilane, each zone independently controls the C/Si ratio, and wafer rotation speed and height can be precisely adjusted during processing. SKY-P20R02 (6”x1) uses horizontal hot-wall technology for single-wafer growth, is compatible with 6-inch and 4-inch epitaxial wafers, is in stable mass production, and features independently controllable gas paths, lower consumable costs, lower maintenance frequency, and flexible NP-type switching. The spatial ALD system physically separates reaction zones so a moving substrate passes precursor A, inert-gas purge, and precursor B zones in sequence; one cycle completes atomic-layer deposition, with intra-wafer, inter-wafer, and inter-batch non-uniformity ＜±5% and refractive-index non-uniformity ＜±3%, plus independent A-source and B-source gas paths, adjustable process distance, controllable source-bottle pressure, automatic wafer loading and unloading, expandable chambers and gas paths, and customer customization. The open roll-to-roll graphene preparation system continuously moves substrates such as polyimide or polyester film and graphene precursor material through rollers, uses CVD or CVD-derived technology with precursor material such as methane heated in an inert atmosphere, and deposits graphene through pyrolysis and deposition before later peeling or device integration. The roll-to-roll system is designed for continuous high-efficiency large-scale graphene-film production, supports high-quality uniform graphene growth with excellent electrical and physical properties, and allows adjustment of graphene thickness, lattice structure, and morphology for applications in electronics, optics, and energy.
Capabilities and products
- SiC silicon carbide epitaxy equipment
- Atomic layer deposition equipment, including spatial types
- Research-grade customized CVD equipment
- Open roll-to-roll graphene film production equipment