At a glance
| Booth | R7200, S8044 |
| Country | TW |
| Website | www.ppmiglobal.com/website/index.php |
Company profile
PENTAPRO MATERIALS INC. was established in March 2011 with capital of NT$ 589 million, and its production facilities are located in Tainan Science Industrial Park with legal capability to manufacture Class 3 hazardous chemicals. The company develops and manufactures semiconductor-grade ultra-high-purity precursors for semiconductor applications, with purity levels up to 8N for various chemical elements, and states an objective of becoming a global supplier of ALD precursors. Its core businesses cover precursor products, cylinder cleaning and refilling services, specialty gases and custom chemical development. Named precursor products include TSA, TMAl, TEAl, TMGa, TEGa, TMIn, TESb, DEZn and CCTBA, while specialty gases include DUV, ArF laser and KrF laser products. Cylinder cleaning and inspection services include residue removal, helium leak detection and cylinder regeneration. Its R&D capabilities include trace analysis, purification and synthesis of precursors, with a technology roadmap covering high dielectric constant materials, wide bandgap materials, corrosion-resistant materials and high thermal conductivity insulating materials. Quality and technical credentials include ISO 9001:2015, ISO 14001:2015 and ISO 45001:2018 management-system certifications plus TAF certification for ultra-trace analysis capabilities. PentaPro identifies integrity, commitment, innovation and customer satisfaction as core values, with commitments extending to employees, customers, shareholders, suppliers and society. Its environmental, health and safety policy covers customer priority and strict quality control, continuous improvement and technological innovation, regulatory compliance and risk prevention, environmental protection with energy saving and waste reduction, and health and safety with full participation. A company milestone is completion of its first TMG in August 2012, followed by continued cooperation with clients to develop new techniques.
Exhibits
PENTAPRO MATERIALS INC. develops its own techniques for metal-organic products. Its semiconductor product list includes TMAl(Semi Grade), with formula (CH3)3Al and CAS No. 75-24-1, and TMAl(HEMT Grade), with the same formula and CAS No. 75-24-1. The same semiconductor list includes TSA with formula (SiH3)3N and CAS No. 13862-16-3, TEAl with formula (C2H5)3Al and CAS No. 97-93-8, and TEA with formula (C2H5)3N and CAS No. 121-44-8. Additional semiconductor products include 3DMAS with formula [(CH3)2N]3SiH and CAS No. 15112-89-7, DEAlO with formula (C2H5)2AlOC2H5 and CAS No. 1586-92-1, and DeZn with formula (C2H5)2Zn and CAS No. 557-20-0. The semiconductor list also identifies TDMAV with formula C8H24N4V and CAS No. 19824-56-7 and TDMAHf with formula [(CH3)2N]4Hf and CAS No. 19782-68-4. For III-V semiconductor products, PENTAPRO MATERIALS INC. again lists TMAl(Semi Grade), TMAl(HEMT Grade) and TSA with the same formulas and CAS numbers shown in its semiconductor product list. Its III-V semiconductor range includes TMIn with formula (CH3)3In and CAS No. 3385-78-2, TMGa with formula (CH3)3Ga and CAS No. 1445-79-0, and TEGa with formula (C2H5)3 Ga and CAS No. 1115-99-7. The III-V list also includes TEAl with formula (C2H5)3Al and CAS No. 97-93-8, DEAlO with formula (C2H5)2AlOC2H5 and CAS No. 1586-92-1, and TEA with formula (C2H5)3N and CAS No. 121-44-8. TESb is listed for III-V semiconductor applications with formula (C2H5)3Sb and CAS No. 617-85-6. Together with the company’s broader precursor, specialty-gas and cylinder-service portfolio, these named products support semiconductor and III-V semiconductor materials applications.
Capabilities and products
- semiconductor-grade ultra-high-purity precursors
- ALD precursors
- cylinder cleaning and refilling services
- custom chemical development
- DUV, ArF and KrF laser gases
- cylinder residue removal
- cylinder helium leak detection
- cylinder regeneration
- precursor trace analysis
- precursor purification
- precursor synthesis
- metal-organic material development
- III-V semiconductor precursors