At a glance
| Booth | R7324 |
| Country | FR |
| Website | www.ion-beam-services.com |
Company profile
Founded in 1987 and headquartered in Peynier, between Marseille and Aix-en-Provence, France, IBS - Ion Beam Services is an Ion Implanter Original Equipment Maker (OEM) that also provides ion implantation services and ion implanter services, including e-chuck (ESC) and ion source upgrades, for the global semiconductor industry. Its solutions address both High-Volume Manufacturing (HVM) and innovation-based R&D with ion implantation tools, process knowledge and customer support. IBS - Ion Beam Services supports mainstream semiconductor fabrication and applications in SiC and GaN wide-bandgap semiconductors, SOI wafer manufacturing through Hydrogen splitting, Photonics including NV centers for quantum technologies, Sensors and MEMS. Its ion implanters handle wafer sizes from samples to 12" and materials including Si, SiC, GaN, GaAs, InP, LNO and LTO, with options for high temperature, cryogenic temperature, solid-precursor vaporizers, and very low dose and very high dose monitoring. Its implantation experience covers most elements of the Mendeleev table, including standard dopants such as Boron, Phosphorous and Arsenic and elements such as Aluminum, Magnesium and Beryllium. With installations across Europe, North America and Asia, IBS - Ion Beam Services serves integrated device manufacturers (IDMs), foundries, and academic and research institutions. Its technology partnerships include TSMC, TSRI and other Taiwanese companies and R&D institutes.
Exhibits
Two IBS - Ion Beam Services production facilities in France and the UK back each other up and provide ion implantation and full-process manufacturing-line services for production volumes from 2" to 12" diameter substrates, including custom shapes, thicknesses and materials. Beamline implantation services cover standard production processing for fabless or ion-implanter-less users and additional capacity without CapEx-heavy investment, backup for breakdowns, temporary overlays and wafer-size upgrades, and R&D processes for product development, test and evaluation with various substrates, shapes, exotic species, temperatures and angles. SiC implantation spans room temperature to +600 °C, samples to 6" wafers, species including Si, B, Al, N, C and P, energies from 5 to 400 keV, and specific SiC ion-implant simulations. PULSION® Plasma Immersion Ion Implant services support doping species AsH3, PH3, BF3 and B2H6 and material-modification species Ar, H2, He, CH4, SiH4, SiF4, Al, CF4 and C2H2, with wafer sizes from samples to 300 mm, medium to high doses and acceleration voltages from 50 V to 20 kV. The PIII process supports conformal 3D doping, PIII and laser-annealing combinations, room-temperature doping, controlled annealing and diffusion depth, junction depths from 10 nm to 15 nm, and applications including backside implantation and power components. Plasma-immersion capabilities also include simultaneous whole-wafer implantation, conformal 3D implantation, ultra-low energy down to 30 eV, hot implantation, solar-cell manufacturing and surface treatment from planar to 3D structures. Wafer types handled from 2" to 12" include Si, Si thin and Taiko wafers, SiC, GaN, InP, GaAs, InSb, HgCdTe, LiNbO3, Sapphire, Diamond and Quartz. Turnkey and process-development work includes radiation sensors such as gamma dosimeters and photodiodes, CHEMFET chemical sensors, PT100 thermal sensors, mechanical sensors, resistors and capacitors, and power components including a 2,4 kV Si Mosfet for military applications, a 1 kV Bipolar device for a static circuit breaker and a 3,3 kV IGBT. For SiC device manufacturing, IBS - Ion Beam Services provides process blocks including inorganic masking and hot implantation, high-temperature implant annealing, plasma etching and fast annealing for metallization. Component-development support includes process simulation using SILVACO software, process integration, electrical simulations and mask design, and its production line includes 2" to 6" compatible systems. Characterization capabilities include online mechanical profilometry, optical thickness measurement and sheet resistance with a prober; physical and defect analysis by D-SIMS, ToF-SIMS, Micro Auger, XPS, dual-beam FIB, TEM, IR Thermography and laser decapsulation; and offline layer-thickness and morphology analysis, Optical 3D Profilometer, Micro Raman, AFM Veeco and SEM. Single-step and complete-product processing includes thin-film deposition by PVD (Sputtering) and PECVD, thermal oxidation and diffusion, RTA annealing, wet chemical and dry RIE etching, and photolithography.
Capabilities and products
- ion implanter OEM manufacturing
- ion implantation services
- ion implanter service and upgrades
- 2–12 inch substrate ion implantation
- SiC high-temperature ion implantation up to 600°C
- Plasma Immersion Ion Implant services
- SILVACO process simulation services
- PVD (Sputtering) thin-film deposition foundry services
- PECVD thin-film deposition foundry services
- thermal oxidation and diffusion foundry services
- RTA annealing foundry services
- wet chemical etching foundry services
- dry RIE etching foundry services
- photolithography foundry services
- Micro Raman analysis services
- AFM analysis services
- SEM analysis services