At a glance
| Booth | R7324 |
| Country | FR |
| Website | www.ion-beam-services.com |
Company profile
IBS Empowering Semiconductor Future IBS is pleased to announce its participation in SEMICON Taiwan 2025 at the French Pavillion. Founded in 1987 and headquartered in Peynier (between Marseille and Aix-en-Provence), France, IBS is an Ion Implanter Original Equipment Maker ( OEM ) but also offers ion implantation services and ion implanter services (e-chuck (ESC), ion source upgrade…) for the global semiconductor industry. Today, IBS stands ready as a strategic technology partner, offering next-generation solutions that meet the demands of both High-Volume Manufacturing (HVM) and innovation-based R&D with their high-performance tools, deep process knowledge, and responsive customer support. IBS offers solutions tailored to both mainstream semiconductor fabrication and emerging applications in the field of wide-bandgap semiconductors (WBG) such as SiC and GaN, wafer manufacturing (Hydrogen splitting for SOI wafers), Photonics (NV center for quantum technologies…), Sensors, and MEMS. IBS ion implanters are flexible equipment that can handle wafer sizes from samples to 12" , supports a broad spectrum of materials, including Si, SiC, GaN , GaAs, InP, LNO, LTO…, and adapt to any process requirement thanks to a robust baseline and multiple options: high temperature, cryogenic temperature, vaporizers for solid precursors, very low dose and very high dose monitoring . Over the years, IBS worked on implanting most of the elements of the Mendeleev table , our experts can help you implant standard dopants like Boron, Phosphorous and Arsenic but also more exotic elements like Aluminum, Magnesium or Beryllium. With installations across Europe, North America, and Asia, IBS serves both integrated device manufacturers (IDMs) and foundries , alongside academic and research institutions. IBS is already a proven Technology Partner of TSMC, TSRI and many other Taiwanese companies and R&D institutes!
Exhibits
Provides ion implanters, ion implantation services, and ion implanter services such as electrostatic chuck (ESC) and ion-source upgrades. Ion implanters handle samples through 12-inch wafers and support materials including Si, SiC, GaN, GaAs, InP, LNO and LTO, with options for high/cryogenic temperature, solid-precursor vaporizers, and very-low/very-high-dose monitoring.
Capabilities and products
- Ion Implanter Original Equipment Maker (OEM)
- ion implantation services
- e-chuck (ESC) and ion source upgrade services
- wide-bandgap semiconductors such as SiC and GaN
- wafer sizes from samples to 12 inch
- supports Si, SiC, GaN, GaAs and InP materials
- high temperature and cryogenic temperature process options
- implanting standard dopants like Boron, Phosphorous and Arsenic
- proven technology partner of TSMC and TSRI
- hydrogen splitting for SOI wafers