At a glance
| Booth | T9104 |
| Country | TW |
| Website | www.easeplus.com.tw/sapphiresubstratemanufacturers/%E9%97%9C%E6%96%BC%E6%88%91%E5%80%91 |
Company profile
EASE PLUS CO., LTD. was established in 2016 with the objective of providing complete solutions for varied customer problems. The company works with partners on development and continued technical improvement to support a broad range of application needs. After-sales service is part of its customer-support model. EASE PLUS CO., LTD. has developed technologies for semiconductor and diode-related fields. The company passed ISO 9001:2015 quality-management international certification in 2021. Its main business combines wafer and substrate materials, CNC machining, customized equipment, and equipment maintenance. The listed wafer and substrate materials include sapphire, silicon, and silicon carbide, while technical integration is also part of the company’s solution scope. CNC work is performed according to customer-provided shapes and is used to produce products with flatness at the level of several micrometers. The company’s solution scope serves semiconductor and related manufacturing customers through substrate materials, precision machining, equipment customization, maintenance, and technical integration. Semiconductor and diode applications are explicitly identified as fields in which the company has developed its own technology.
Exhibits
The wafer range includes wafers, listed as substrate, Wafer and Carrier Wafer, in materials including sapphire (Sapphire, Al2O3), silicon (Silicon, Si) and silicon carbide (SiC). For these listed wafer and substrate materials, CNC machining can follow customer-provided shapes to produce products with several-micrometer flatness. The equipment-service scope includes customized equipment together with equipment maintenance and servicing. The product scope separately lists patterned sapphire substrates (PSS). It also separately lists silicon carbide (SiC). Silicon-on-insulator is described with advantages including freedom from latch-up, reduced parasitic source and drain capacitance, easier fabrication of shallow junctions, radiation hardness, operation at high temperature, improved transconductance, and a sharper subthreshold slope. The company describes heteroepitaxial technology through an ultra-thin silicon (UTSi) process that forms high-quality silicon-on-sapphire (SOS) material. Silicon-on-sapphire (SOS) material is identified as first introduced in 1964. SOS is recognized for its potential for high speed and low power. The combined material and process range therefore includes sapphire wafers and substrates, silicon wafers and substrates, SiC wafers and substrates, Carrier Wafer products, PSS, customer-shaped CNC processing, custom equipment, and equipment maintenance. Customer-specific sapphire and other listed substrate shapes can be addressed through the same CNC machining route, using customer-provided geometries and the stated several-micrometer flatness capability. Carrier Wafer is explicitly included alongside substrate and wafer terminology in the company’s listed wafer business.
Capabilities and products
- sapphire wafers and substrates
- silicon wafers and substrates
- SiC wafers and substrates
- Carrier Wafer
- patterned substrate PSS
- customer-shape CNC machining to several-micrometer flatness
- custom equipment
- equipment maintenance and servicing
- UTSi heteroepitaxy for SOS material formation