At a glance
| Booth | J2934 |
| Country | TW |
| Website | www.atecom.com.tw |
Company profile
Atecom Technology Co., Ltd. was established in Taipei, Taiwan in 1998 as a manufacturer and supplier of semiconductor materials. Its material portfolio includes silicon ingots and wafers, epitaxial wafers, sapphire, indium phosphide, silicon carbide, gallium nitride and thin-film lithium niobate. The company supplies these semiconductor and compound-material crystals for applications that include AI, advanced packaging, optical communications, thermal management, MEMS, LED and power electronics, while continuing to expand its advanced-material product lines.
Exhibits
Atecom Technology Co., Ltd. organizes its offering across Semiconductor, Compound WBG, Compound IIIV, Advanced Materials, and Process & Parts/MISC categories, with semiconductor wafer materials including GaN, SiC, silicon, SOI, diamond and ceramic products. Within the semiconductor category, the listed substrate families include silicon, SOI, sapphire, germanium and glass for semiconductor power devices, foundry processes, manufacturing and advanced packaging. Silicon Wafer CZ uses Czochralski growth, and the silicon-wafer applications listed for this material include integrated circuits, detector or sensor devices, MEMS fabrication, optoelectronic components and solar cells. Silicon Wafer FZ uses Float Zone growth and is likewise listed for integrated circuits, detector or sensor devices, MEMS fabrication, optoelectronic components and solar cells. The Silicon Epitaxy product is described as a single-crystal silicon layer deposited onto a single-crystal silicon wafer, providing an epitaxial material option within the silicon family. SOI Wafer, identified as Silicon On Insulator, is presented for improving MEMS, CMOS and RF performance. Silicon Ingot is offered as boule or non-wafering material and is identified as a material used in electronics and renewable-energy industries. Sapphire Wafer is specified as Al2O3 single-crystal aluminum oxide, with hardness, optical transparency and thermal stability supporting LED, RF and optoelectronic applications. Germanium Wafer is listed for sensors, solar cells, infrared optics, high-brightness LEDs and other semiconductor applications. Glass-wafer and quartz options include Glass, Al2O3, fused and silica wafers for semiconductor carriers, TGV processing, VR, AR, projectors, Laser TV, optical communication and medical applications. For gallium nitride, Atecom Technology Co., Ltd. lists GaN FS Wafer as a Gallium Nitride Free Standing Bulk Wafer for power electronics, RF communications, AI, electric vehicles and optoelectronic applications. The wide-bandgap characteristics of GaN FS wafers are associated with high-voltage and high-power components, while RF use includes high-frequency signal transmission and future 6G communications. The same GaN FS material is presented as a next-generation material for hardware used in AI computing and for electric-vehicle power conversion systems such as on-board chargers and inverters. GaN-based technology is also identified for green and blue LED manufacturing, while the free-standing wafers are primarily associated with power and RF uses. GaN on Silicon Epitaxy Wafer is offered with Power AlGaN HEMT structures in D-Mode and E-Mode, and its specifications can be customized for applications including mobile-phone fast chargers and EV charging stations. GaN on Silicon HEMT products are characterized by excellent switching-loss performance, a property stated alongside their use in mobile fast-charging adapters and electric-vehicle charging stations, and the product information also states that specifications are customizable. The GaN on Silicon specification table lists total epitaxial thickness of 2~6 µm for both D-Mode and E-Mode structures on 4~12-inch Silicon <111> wafers. For E-Mode, the table lists a pGaN cap of 70 ~ 100 nm, while the AlGaN barrier is listed as 20~25 nm with Al% 20~30 for D-Mode and 10~20 nm with Al% 15~25 for E-Mode. The listed epitaxial stack also includes GaN Channel, AlGaN Buffer and AlN layers in the GaN on Silicon structure. GaN on Sapphire LED Wafer is identified as Green Blue LED Wafer for display devices such as smartphone screens and television displays as well as future optical communications. GaN on Sapphire Power Wafer is listed with Power HEMT D-MODE and E-MODE structures for power applications. GaN Template Wafer is a Gallium Nitride Template Wafer on a sapphire-based wafer and is presented for LED or power use. The SiC Wafer family is presented as Silicon Carbide Wafer for electric-vehicle automotive and future AR applications, drawing on its wide-bandgap material characteristics. SiC Epitaxy Wafer is listed for producing Schottky diodes, MOSFETs and JFETs in voltage classes from 650V~3300V or even higher. SiC Ingot is grown by the PVT, or Physical Vapor Transport, method, with 4H-N conductive material used for power applications and 4H-SI semi-insulating material used mainly for RF or AR. Ga2O3 Wafer, identified as Gallium Oxide Wafer, is presented as a wide-bandgap material for power, RF and additional applications. The Advanced Materials category includes diamond, AlN and silicon nitride products positioned for advanced packaging solutions and AI-computing materials. Diamond Wafer is available in monocrystalline and polycrystalline forms, both described as semiconductor materials with high thermal conductivity, electrical insulation and mechanical hardness. Single-crystal diamond is listed for high-frequency and high-power applications including next-generation RF devices, microwave communications and quantum-computing components. Polycrystalline diamond is presented for large-area deposition and for thermal-management substrates and packaging used in electric vehicles, 5G infrastructure and high-performance computing systems. AlN Wafer, or Aluminum Nitride, is listed for LED packages, power modules, IGBT, power resistors, wafer bonding and semiconductor heat-dissipation substrates. Metalized processing for AlN includes thin film, thick film, DPC, DBC and AMB options. Si3N4 Wafer, identified as Silicon Nitride, is listed for circuit substrates, heat spreaders, automotive power modules, IGBT and EV power modules. Si3N4 metalized processing likewise includes thin film, thick film, DPC, DBC and AMB methods. Metalized CERAMIC products are offered with AMB, DPC and DBC processes, with AMB defined as Active Metal Brazed, DPC as Direct Plated Copper and DBC as Direct Bonded Copper. The ceramic metal process is customizable for different applications, adding a processing option alongside the listed semiconductor, compound-material and advanced-material wafer products. Across the GaN product families, customizable specifications, HEMT structures, LED wafers, template wafers and free-standing bulk wafers provide material options for power, RF, AI, EV, display and optical-communication uses. Across the silicon and advanced-material families, Atecom Technology Co., Ltd. covers substrates and crystals for foundry processing, MEMS, CMOS, RF, advanced packaging, thermal management and high-power electronics.
Capabilities and products
- silicon ingots and wafers
- epitaxial wafers
- sapphire wafer materials
- indium phosphide crystal materials
- silicon carbide crystal materials
- gallium nitride crystal materials
- thin-film lithium niobate materials
- SOI wafers
- GaN-on-Silicon epitaxy wafers
- SiC epitaxy wafers
- GaN free-standing wafers
- GaN-on-Sapphire LED wafers
- GaN-on-Sapphire power wafers
- Ga2O3 wafers
- germanium wafers
- glass wafers