At a glance
| Booth | T9404 |
| Country | TW |
| Website | ntustrsclab.weebly.com |
Company profile
IR Vision develops high-sensitivity photonic infrared detectors using proprietary Quasi Photo-Dember (QPD) technology. Its detector platform is intended to make infrared sensing systems more compact and deployable by reducing size, weight, energy requirements and cost pressures associated with conventional high-performance infrared solutions. The company targets spectroscopy, gas sensing, smart sensing and unmanned aerial vehicle applications. Its technology also addresses other uses constrained by size, weight, power, price and performance requirements, collectively identified as SWaP3. IR Vision provides infrared detector components for integration into customers' own modules and systems. Its technology roadmap extends beyond components toward broader infrared imaging and sensing platforms.
Exhibits
IR Vision develops an InAs QPD photodetector based on its proprietary Quasi Photo-Dember technology. The detector platform provides intrinsic photodetector gain while operating at zero electrical bias. It responds over a broadband wavelength range from 400 nm to 3.5 μm. The photodetector operates at room temperature without thermoelectric cooling. Detector components can be integrated into spectroscopic instruments, gas sensors and compact sensing modules, including systems with SWaP3 constraints. The Nano Electronics & Optoelectronic Semiconductors (NEOS) Laboratory at National Taiwan University of Science and Technology researches electrical transport in two-dimensional layered semiconductor nanostructures. Other NEOS Lab research includes electron and hole accumulation at layered semiconductor surfaces. Its research topics encompass new-generation infrared and thermal detectors and the development of thermal imaging chips through industry-academic cooperation. The laboratory studies optoelectronic properties and device fabrication involving low-dimensional semiconductor nanomaterials. It also investigates high-speed time-resolved photoconduction in semiconductors. Solar-cell measurements include transient photovoltage (TPV) and transient photocurrent (TPC) methods. Industry-university projects at the laboratory have addressed development of commercial photoconductivity characterization systems. The NEOS Lab research team earned semiconductor-poster honorable mentions at the Annual Meeting of the Physical Society in 2026, 2025, 2024, 2022 and 2020. The team received semiconductor-poster winning prizes at the Annual Meeting of the Physical Society in 2023 and 2019. Laboratory researchers also won an oral-presentation prize at the 2nd International Conference on Materials Design and Applications in 2019. A professor at the laboratory received a Ministry of Science and Technology outstanding young scholar research project in physics in 2019. The laboratory professor received university teaching and research distinctions for academic year 112. Other academic distinctions for the professor include the university’s outstanding research award for academic year 108 and teaching awards for academic years 105 and 104. The professor also received a university research award for academic year 110 and a college teaching award for academic year 109. The team's work on layered semiconductors attracted scientific media coverage in 2014 and 2018. The team was invited by the imaging journal JoVE to record an experimental video in 2016. The laboratory's research is based in the Graduate Institute of Applied Science and Technology at Taiwan Tech. For device fabrication, NEOS Lab uses a dual-beam focused ion beam (FIB) system and an atomic force microscope (AFM). Its fabrication equipment also includes a gas-purged glovebox and an RF magnetron sputtering system. A high-vacuum infrared rapid heating and annealing system supports rapid thermal annealing (RTA) work. The laboratory uses Raman scattering spectroscopy for material investigations. Electrical transport research uses a low-temperature four-point-probe system designated No. 1. Further low-temperature electrical measurement systems are designated Nos. 2 and 3. For optoelectronic research, the laboratory operates a multifunction photoconductivity measurement system designated No. 1. A time-resolved photoconductivity (TRPC) instrument measures fast photoelectrical responses.
Capabilities and products
- 400 nm–3.5 μm room-temperature zero-bias InAs QPD photodetector components