Grace Haozan Applied Material Co., Ltd

Exhibitor at SEMICON Taiwan 2026 · Booth K2365

Booth K2365Country TW8 product topics
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BoothK2365
CountryTW
Websitewww.gracehaozan.com
Exhibitor profile

Company profile

Grace Haozan Applied Material Co., Ltd was established in 1981 and specializes in consumables for grinding, lapping, polishing, wire sawing, texturing, and blasting used in surface-processing applications. Its product range includes polishing powder, silicon carbide, aluminum oxide abrasive grains and high-purity aluminum oxide powder, boron carbide, cerium oxide polishing powder, polishing slurries and pads, I.D. saw and grinding coolants, diamond-wire coolant, lapping vehicles, monocrystalline and polycrystalline diamond powder and diamond slurry, blasting materials including glass bead and nut shell, nut-shell deflashing media, the listed item Glass Power, zirconium oxide, silicon nitride, cleaners, and related materials. The company invests in R&D and supplies materials and components to semiconductor, solar, optoelectronic-semiconductor, optical, LED, and LCD industries. Applications include single-crystal and polycrystalline silicon, quartz, sapphire, LED, optoelectronic semiconductors, lithium niobate, optical raw materials, and cutting, grinding, and polishing of hard and brittle materials.

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Exhibits

Silicon carbide is produced as a synthetic electric-furnace material from high-purity quartz sand and petroleum coke, with low-temperature cubic and high-temperature hexagonal crystalline forms and crystallization at 1800 ℃ to 2500 ℃. Less-crystallized material from the outer SiC cylinder is used mainly for refractory and metallurgical applications, while well-crystallized SiC is used for wire sawing, lapping, abrasives, and other applications. Crystallized SiC is crushed, milled, and classified into macrogrit and microgrit particle-size distributions and chemical-purity grades, with wire-sawing and lapping sizes supplied in gradings based on industrial and customer specifications. SiC is described as having extreme toughness, high hardness next to diamond, CBN and B4C, chemical and oxidation resistance, low thermal expansion, heat resistance, conductive semiconductor properties, high purity and density, and performance suited to precision wire sawing and lapping of hard and brittle materials. Applications include sawing, abrasives, lapping, polishing, additives and fillers, grinding wheels, abrasive paper and cloth, blasting, refractory and metallurgical uses, engineering ceramics, semiconductors, photovoltaics, quartz, compound semiconductors, and synthetic crystals. For wire sawing, its SiC microgrits are described as hard, high-purity and sharp-edged with high abrading capability, recycling life, and lower consumption, for silicon and polysilicon ingots, solar wafers, and lapping of brittle or hard materials. Available particle sizes include coarse GC #16 to GC #220, microgrit GC #240 to GC #8000, and GC 1.0 um and GC 0.5 um, with customer-specific production available. Listed properties include SiC content of 92.0 % to 99.8 %, free carbon (F‧C) below 3.0 %, Mohs hardness 9.2, specific gravity greater than 3.15, colors from green or light green to black, no odor, and a melting point of 2450 ℃. Green silicon carbide is described as a green translucent hexagonal crystal with SiC purity up to 99.5 %, good thermal and electrical conductivity, oxidation resistance at high temperature, mechanical strength above aluminum oxide, and microhardness of 2840 to 3320 kg/mm2.

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