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D&X (Taiwan) Co., LTD.

Exhibitor at SEMICON Taiwan 2026 · Booth L1104

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At a glance

BoothL1104
CountryJP
Product categoriesBonding; Interconnect Materials - Wire; Ribbon; Tape; Capillaries & Tools · Ingots, Wafers · Consumables · Compound Semiconductor substrates (GaAs on Silicon; GaN; InP; SiGe, etc.) · Diamond substrates · Epitaxial; Epi; Gettered; Internal Gettered Wafers · Gallium Arsenide (GaAs); Sapphire Substrates · Prime; Polished; Mirrored Wafers · Silicon on Insulator (SOI); Silicon on Sapphire (SOS); Silicon Carbide; · solar cell substrates; crystalline silicon (c-Si); thin film · Strained silicon; Engineered Substrates · Substrate Materials · Test; Monitor Wafers; Reclaim or Virgin · Thin & Thick film substrates for MEMS
Websitewww.dong-xu.co.jp

Company profile

D&X is a semiconductor company based in Tokyo, Japan, with sales coverage spanning Taiwan, China, Korea, Southeast Asia, the Americas, and Europe. Our main business is the R&D and production of tapes, and we also handle wafers ranging from Prime to Dummy grade, offering international trade of wafers in various sizes and special materials. In tapes, we provide tapes specialized for dicing, grinding, heat resistance, and bumping, available in both UV and Non-UV types, all developed and produced in Japan. They can be applied to automotive, sensing, diode, processor, high-tech and other products, and can also be customized for various segments of the semiconductor industry. In wafers, we mainly sell wafers produced by Japan's three major manufacturers, in sizes from 1 to 12 inches and in grades from dummy to prime, and we provide various special insulating films and metal films suitable for enterprises and research institutions. In addition to silicon wafers, we also offer wafers in special materials such as sapphire, silicon carbide, SOI, glass, and gallium arsenide.

Exhibits

Epitaxial Silicon Wafer (EPI Wafer): Structure, Manufacturing and Key Applications An epitaxial wafer, commonly referred to as an EPI wafer, is a semiconductor substrate on which a thin crystalline layer of silicon is grown through a controlled epitaxial deposition process. The grown layer maintains the same crystal orientation as the underlying substrate, forming a continuous and defect-controlled crystal structure. In semiconductor manufacturing, the epitaxial layer is typically deposited on a highly polished silicon wafer. This process allows engineers to precisely control important electrical parameters such as dopant concentration, resistivity, and layer thickness, enabling the fabrication of advanced semiconductor devices. Depending on the application, the epitaxial layer thickness can range from sub-micron levels to several tens of micrometers, allowing device designers to tailor electrical characteristics for specific applications. The epitaxy process involves the deposition of semiconductor material onto a single-crystal substrate while preserving its crystallographic orientation. This technique enables the growth of extremely uniform semiconductor layers with tightly controlled electrical and structural properties. Among these methods, CVD-based epitaxy is commonly used for silicon epitaxial wafers due to its ability to produce high-quality layers with excellent thickness and doping uniformity. Epitaxial wafers offer several technical advantages compared to conventional silicon wafers. The epitaxial layer grows directly from the substrate lattice, resulting in excellent crystal continuity and significantly reduced defect density. This high crystal quality is essential for reliable semiconductor device operation. During epitaxial growth, dopants can be introduced with precise concentration levels. This allows manufacturers to design semiconductor structures with carefully engineered electrical characteristics. Devices fabricated on epitaxial wafers often demonstrate improved electrical performance, including lower leakage current, better breakdown voltage control, and enhanced switching efficiency.

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